VID75-12P1 IXYS, VID75-12P1 Datasheet
VID75-12P1
Specifications of VID75-12P1
Related parts for VID75-12P1
VID75-12P1 Summary of contents
Page 1
... E off MHz ies (per IGBT) thJC R with heatsink compound (0.42 K/m.K; 50 µm) thJH IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved VID VDI L9 X15 L9 T16 NTC X16 F1 Maximum Ratings 1200 ± 125°C ...
Page 2
... Strike distance in air (Pin to heatsink) A Weight Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved Maximum Ratings 103 65 Characteristic Values min. ...
Page 3
... V Fig. 3 Typ. transfer characteristics 600 100 150 200 Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 120 V = 100 81T120 V 2,5 3,0 CE 180 150 I F 120 81T120 120 I RM ...
Page 4
... J V < V CEK CES 200 400 600 800 1000 1200 Fig. 11 Reverse biased safe operating area IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 120 off 60 = 600 V = ± Ω 125°C 81T120 ...