VII50-12P1 IXYS, VII50-12P1 Datasheet

MOD IGBT PHASE LEG 1200V ECOPAC2

VII50-12P1

Manufacturer Part Number
VII50-12P1
Description
MOD IGBT PHASE LEG 1200V ECOPAC2
Manufacturer
IXYS
Datasheet

Specifications of VII50-12P1

Igbt Type
NPT
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 50A
Current - Collector (ic) (max)
49A
Current - Collector Cutoff (max)
1.1mA
Input Capacitance (cies) @ Vce
1.65nF @ 25V
Power - Max
208W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
ECO-PAC2
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VII50-12P1
Manufacturer:
MSC
Quantity:
1 000
IGBT Modules
Short Circuit SOA Capability
Square RBSOA
Preliminary data sheet
Symbol
V
V
I
I
I
V
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
R
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
S18
IGBTs
C25
C80
CM
CES
GES
d(on)
d(off)
SC
r
f
A1
CES
GES
CEK
tot
CE(sat)
GE(th)
on
off
ies
thJC
thJH
VIO
Conditions
T
T
T
V
RBSOA, Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
= 50 A; V
= 1 mA; V
= 25°C
= 80°C
= 25°C
Inductive load, T
V
V
= 25°C to 150°C
= V
= V
= ±15 V; R
= 0 V; V
= 25 V; V
CE
GE
K10
X16
CES
CES
E2
= 600 V; I
= 15/0 V; R
L9
; V
;
GE
GE
GE
GE
GE
= 15 V; T
VII
= ± 20 V
= V
G
V
= ±15 V; R
= 0 V; f = 1 MHz
GE
= 47 Ω; T
C
CE
= 30 A
G
= 0 V; T
in ECO-PAC 2
X13
X15
VJ
= 47 Ω
NTC
T
= 125°C
VJ
VJ
= 25°C
= 125°C
VJ
G
T
= 47 Ω; T
= 125°C
VJ
VJ
(T
= 25°C
= 125°C
L9
F1
VJ
= 25°C, unless otherwise specified)
VID
VJ
= 125°C
NTC
X15
X16
min.
4.5
Characteristic Values
Maximum Ratings
1.65
100
500
L9
T16
typ.
3.1
3.5
4.6
3.4
1.2
70
70
1200
± 20
V
208
CES
49
33
10
50
VDI
max.
180
3.7
6.5
1.1 mA
4.2 mA
0.6 K/W
NTC
K/W
X15
X16
mJ
mJ
nA
nF
µs
ns
ns
ns
ns
W
V
V
A
A
A
V
V
V
VDI 50-12P1
VID 50-12P1
I
V
V
Features
• NPT IGBT's
• FRED diodes
• Industry Standard Package
Advantages
• space and weight savings
• reduced protection circuits
• leads with expansion bend for stress relief
Typical Applications
• AC and DC motor control
• AC servo and robot drives
• power supplies
• welding inverters
Recommended replacement:
Please contact your local
sales office
C25
- positive temperature coefficient of
- fast switching
- fast reverse recovery
- low forward voltage
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
CES
CE(sat) typ.
saturation voltage
=
= 1200 V
=
VII 50-12P1
VIO 50-12P1
Pin arangement see outlines
3.1 V
49 A
1 - 4
B3

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VII50-12P1 Summary of contents

Page 1

... E off MHz ies (per IGBT) thJC R with heatsink compound (0.42 K/m.K; 50 µm) thJH IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved VID VDI L9 X15 L9 T16 NTC X16 F1 Maximum Ratings 1200 ± 125°C ...

Page 2

... Strike distance in air (Pin to heatsink) A Weight Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved Maximum Ratings 49 31 Characteristic Values min. ...

Page 3

... 20V 125° 25° Fig. 3 Typ. transfer characteristics 600V 25A Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 11V 40 = 25° 42T120 42T120 42T120 120 160 VDI 50-12P1 ...

Page 4

... Fig. 9 Typ. turn on energy and switching 200 400 600 800 1000 1200 1400 Fig. 11 Reverse biased safe operating area IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 150 ns E off t 100 50 42T120 160 ...

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