VII50-12P1 IXYS, VII50-12P1 Datasheet
VII50-12P1
Specifications of VII50-12P1
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VII50-12P1 Summary of contents
Page 1
... E off MHz ies (per IGBT) thJC R with heatsink compound (0.42 K/m.K; 50 µm) thJH IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved VID VDI L9 X15 L9 T16 NTC X16 F1 Maximum Ratings 1200 ± 125°C ...
Page 2
... Strike distance in air (Pin to heatsink) A Weight Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved Maximum Ratings 49 31 Characteristic Values min. ...
Page 3
... 20V 125° 25° Fig. 3 Typ. transfer characteristics 600V 25A Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 11V 40 = 25° 42T120 42T120 42T120 120 160 VDI 50-12P1 ...
Page 4
... Fig. 9 Typ. turn on energy and switching 200 400 600 800 1000 1200 1400 Fig. 11 Reverse biased safe operating area IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 150 ns E off t 100 50 42T120 160 ...