IXFN140N20P IXYS, IXFN140N20P Datasheet
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Manufacturer Part Number
IXFN140N20P
Description
MOSFET N-CH 200V 115A SOT227B
Specifications of IXFN140N20P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 70A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
115A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
7500pF @ 25V
Power - Max
680W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.018 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
115 A
Power Dissipation
680 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
115
Rds(on), Max, Tj=25°c, (?)
0.018
Ciss, Typ, (pf)
7500
Qg, Typ, (nc)
240
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
680
Rthjc, Max, (ºc/w)
0.22
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
D(RMS)
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
Terminal torque
Mounting torque
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
GS
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
= 15 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
D
= 250 μA
= 4 mA
, V
G
= 70 A
= 140A
= 4 Ω
DS
= 0
GS
= 1 MΩ
DD
T
≤ V
J
= 150°C
IXFN 140N20P
DSS
JM
,
200
Min.
2.5
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
Typ.
14
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
2500
200
200
±20
±30
115
100
280
100
680
175
300
60
10
30
4
±100
250
Max.
5.0
25
18
V/ns
mΩ
mΩ
mJ
V~
nA
μA
μA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
J
miniBLOC, SOT-227 B (IXFN)
Either source tab S can be used forsource
current or Kelvin gate return.
Features
Advantages
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic diode
Easy to mount
Space savings
High power density
G = Gate
S = Source
V
I
R
E153432
D25
t
rr
G
DS(on)
DSS
S
= 200
= 115
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤ 150 ns
D
D = Drain
DS99245E(03/06)
18 mΩ Ω Ω Ω Ω
S
A
V
Related parts for IXFN140N20P
IXFN140N20P Summary of contents
... DSS DS DSS DS(on 140A GS D Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFN 140N20P Maximum Ratings 200 = 1 MΩ 200 GS ±20 ±30 115 100 280 JM 60 100 4 ≤ DSS 680 -55 ... +175 175 -55 ... +150 300 2500 1 ...
... Pulse test, t ≤ 300 μs, duty cycle d ≤ -di/dt = 100 A/μ 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ 7500 ...
... V olts D S Fig Nor m alize d to DS(on 70A V alue ain Cur 3 10V 15V GS 2 1 100 150 mperes D © 2006 IXYS All rights reserved º C 300 270 240 210 180 150 7V 120 1.5 2 2.5 º 2 0.5 ...
... Source -To-Drain V oltage 350 300 250 200 150 100 º 150 0.4 0.6 0 olts S D Fig. 11. Capacitance 100,000 10,000 1,000 100 olts DS IXYS reserves the right to change limits, test conditions, and dimensions. 120 110 100 6 º 1.2 1.4 1000 C iss 100 C ...
... IXYS All rights reserved Fig. 13. M axim um Trans ie nt The tance 0.001 0.01 Pulse Width - Seconds IXFN 140N20P 0 IXYS REF: T_140N20P (88) 01-23-06-B.xls ...
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