IXFN520N075T2 IXYS, IXFN520N075T2 Datasheet

MOSFET N-CH 75V 480A SOT227

IXFN520N075T2

Manufacturer Part Number
IXFN520N075T2
Description
MOSFET N-CH 75V 480A SOT227
Manufacturer
IXYS
Series
TrenchT2™r
Type
TrenchT2 GigaMOS HiperFetr
Datasheet

Specifications of IXFN520N075T2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.9 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
480A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
545nC @ 10V
Input Capacitance (ciss) @ Vds
41000pF @ 25V
Power - Max
940W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Product
MOSFET Gate Drivers
Rise Time
36 ns
Fall Time
35 ns
Supply Current
200 A
Maximum Power Dissipation
940 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Maximum Turn-off Delay Time
80 ns
Maximum Turn-on Delay Time
48 ns
Minimum Operating Temperature
- 55 C
Number Of Drivers
Single
Number Of Outputs
1
Output Current
480 A
Output Voltage
75 V
Vdss, Max, (v)
75
Id(cont), Tc=25°c, (a)
480
Rds(on), Max, Tj=25°c, (?)
0.0019
Ciss, Typ, (pf)
41000
Qg, Typ, (nc)
545
Pd, (w)
940
Rthjc, Max, (k/w)
0.16
Package Style
SOT227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchT2
HiperFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
I
E
P
T
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
L(RMS)
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
External Lead Current Limit
T
T
T
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS
I
Mounting Torque
Terminal Connection Torque
V
V
V
V
V
Test Conditions
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
TM
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C (Chip Capability)
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
≤ 1mA
= 0V, I
= V
= ±20V, V
= V
= 10V, I
GigaMOS
GS
DSS
, I
D
, V
D
D
= 3mA
= 8mA
= 100A, Note 1
GS
DS
= 0V
= 0V
t = 1 minute
t = 1 second
GS
TM
= 1MΩ
Preliminary Technical Information
T
J
= 150°C
IXFN520N075T2
JM
Min.
2.5
75
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
1.3/11.5
1.5/13
1500
2500
3000
±20
±30
480
200
200
940
175
300
260
Typ.
1.5
30
75
75
3
±200 nA
Nm/lb.in.
Nm/lb.in.
Max.
5.0
1.9 mΩ
25
2 mA
V~
V~
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
J
V
I
R
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
Advantages
Applications
miniBLOC, SOT-227
G = Gate
S = Source
D25
International Standard Package
miniBLOC, with Aluminium Nitride
175°C Operating Temperature
Isolation Voltage 2500
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
DC-DC Converters and Off-Line UPS
Primary-Side Switch
High Speed Power Switching
Applications
Isolation
Low R
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
E153432
DS(on)
G
=
=
≤ ≤ ≤ ≤ ≤
S
D = Drain
75V
480A
1.9mΩ Ω Ω Ω Ω
D
DS100193A(11/09)
V~
S

Related parts for IXFN520N075T2

IXFN520N075T2 Summary of contents

Page 1

... D = ±20V GSS DSS DS DSS 10V 100A, Note 1 DS(on © 2009 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXFN520N075T2 TM Maximum Ratings 75 = 1MΩ ±20 ±30 480 200 1500 JM 200 3 940 -55 ... +175 175 -55 ... +175 300 260 2500 3000 1.5/13 1.3/11.5 30 Characteristic Values Min ...

Page 2

... I = 260A 177 DSS D 135 0.05 Characteristic Values Min. Typ 357 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN520N075T2 SOT-227B (IXFN) Outline Max Ω (M4 screws (4x) supplied 0.16 °C/W °C/W Max. 520 A 1600 A 1.25 V 150 6,404,065 B1 ...

Page 3

... Value vs. D 220 200 180 T = 175ºC J 160 140 120 100 T = 25ºC J 200 250 300 350 IXFN520N075T2 Fig. 2. Extended Output Characteristics @ T 350 V = 15V GS 10V 300 9V 8V 250 7V 200 150 6V 100 0.0 0.5 1.0 1 Volts DS Fig ...

Page 4

... T = 25º 0.8 0.9 1.0 1.1 10,000 C iss 1,000 100 C oss 10 C rss 0.1 IXFN520N075T2 Fig. 8. Transconductance 40º 100 120 140 I - Amperes D Fig. 10. Gate Charge V = 37. 260A 10mA G 0 100 200 300 Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area R ...

Page 5

... R = 1Ω 10V 37.5V DS 140 400 120 300 100 T = 125ºC J 200 80 100 60 40 140 160 180 200 IXFN520N075T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 1Ω 10V 37. 125º 25º 100 120 140 I - Amperes D Fig. 16. Resistive Turn-off Switching Times vs ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance Fig. 19. Maximum Transient Thermal Impedance .sadgsfgsf 0.001 0.01 Pulse Width - Seconds IXFN520N075T2 0.1 1 IXYS REF: F_520N075T2 (V9)11-09-09 10 ...

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