IXFN100N50P IXYS, IXFN100N50P Datasheet
IXFN100N50P
Specifications of IXFN100N50P
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IXFN100N50P Summary of contents
Page 1
... GS(th ± GSS DSS DS DSS Note 1 DS(on © 2006 IXYS All rights reserved IXFN 100N50P Maximum Ratings 500 = 1 MΩ 500 GS ±30 ± 250 JM 100 100 5 ≤ DSS 1040 -55 ... +150 150 -55 ... +150 300 min 2500 3000 1 Nm/lb.in. 1 Nm/lb.in. 30 Characteristic Values Min. ...
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... I RM Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ Test current IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min ...
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... DS Fig Normalized to I DS(on) vs. Drain Current 3 2 10V GS 2.6 2.4 2.2 2 1.8 1.6 1.4 1 100 120 I - Amperes D © 2006 IXYS All rights reserved 220 = 10V 200 8V 180 160 7V 140 120 100 3.5 4 4.5 5 5.5 0 3.1 = 10V GS 8V 2.8 7V 2.5 2 ...
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... T = 125º 25º 0.4 0.6 0 Volts SD Fig. 11. Capacitance 100,000 MHz 10,000 1,000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 150 135 120 105 6 1.2 1.4 1.6 0 1,000 C iss 100 ...
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... IXYS All rights reserved Fig. 13. Maximum Transient Thermal Resistance 0.01 0.1 Pulse W idth - Seconds IXFN 100N50P 1 10 ...