STE48NM50 STMicroelectronics, STE48NM50 Datasheet - Page 2

• Manufacturer Part Number: STE48NM50
• Description: MOSFET N-CH 550V 48A ISOTOP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STE48NM50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 117nC @ 10V
• Input Capacitance (ciss) @ Vds: 3700pF @ 25V
• Power - Max: 450W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 550 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 48 A
• Power Dissipation: 450 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 24A
• Drain Source Voltage Vds: 550V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3170-5

STE48NM50
2/9
Table 3: Absolute Maximum ratings
( )
(*) I
Table 4: Thermal Data
(**) with conductive GREASE Applies
Table 5: Avalanche Characteristics
ELECTRICAL CHARACTERISTICS (T
Table 6: On/Off
Rthc-sink (**) Thermal Resistance Case-sink
Pulse width limited by safe operating area
V
Rthj-case
SD
Symbol
R
Symbol
dv/dt (*)
V
Symbol
(BR)DSS
I
I
DM
P
I
DS(on)
GS(th)
V
V
DSS
GSS
T
E
I
I
I
TOT
ISO
T
GS
stg
48A, di/dt
AR
D
D
AS
j
( )
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (AC-RMS)
Storage Temperature
Max. Operating Junction Temperature
Thermal Resistance Junction-case
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
400 A/µs, V
Parameter
DS
j
DD
= 25 °C, I
= 0)
V
GS
(BR)DSS
= 0)
C
D
= 25°C
, T
= I
Parameter
Parameter
j
j
max)
AR
I
V
V
V
V
V
D
T
DS
DS
GS
DS
GS
CASE
, V
JMAX.
= 250 µA, V
= Max Rating, T
C
C
= Max Rating
= ± 30V
= V
= 10V, I
DD
= 25°C
= 100°C
Test Conditions
= 50 V)
GS
=25°C UNLESS OTHERWISE SPECIFIED)
, I
D
D
= 24A
GS
= 250µA
= 0
C
Typ
= 125°C
Max
Min.
500
3
–65 to 150
Max Value
Value
Typ.
0.08
2500
0.28
0.05
±30
192
450
150
3.6
810
48
30
15
4
15
Max.
±100
100
0.1
10
5
W/°C
°C/W
°C/W
V/ns
Unit
Unit
Unit
µA
µA
nA
°C
°C
W
mJ
V
V
A
A
A
V
V
A