STE48NM50 STMicroelectronics, STE48NM50 Datasheet - Page 4

MOSFET N-CH 550V 48A ISOTOP

STE48NM50

Manufacturer Part Number
STE48NM50
Description
MOSFET N-CH 550V 48A ISOTOP
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STE48NM50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 24A, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
117nC @ 10V
Input Capacitance (ciss) @ Vds
3700pF @ 25V
Power - Max
450W
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Forward Transconductance Gfs (max / Min)
20 S
Drain-source Breakdown Voltage
550 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
48 A
Power Dissipation
450 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Continuous Drain Current Id
24A
Drain Source Voltage Vds
550V
On Resistance Rds(on)
80mohm
Rds(on) Test Voltage Vgs
30V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3170-5

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
STE48NM50
Quantity:
213
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Figure 3: Safe Operating Area
Figure 4: Output Characteristics
Figure 5: Transconductance
Figure 6: Thermal Impedance
Figure 7: Transfer Characteristics
Figure 8: Static Drain-source On Resistance

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