MOSFET N-CH 500V 53A ISOTOP

STE53NC50

Manufacturer Part NumberSTE53NC50
DescriptionMOSFET N-CH 500V 53A ISOTOP
ManufacturerSTMicroelectronics
SeriesPowerMESH™
STE53NC50 datasheet
 


Specifications of STE53NC50

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs80 mOhm @ 27A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C53AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs434nC @ 10VInput Capacitance (ciss) @ Vds11200pF @ 25V
Power - Max460WMounting TypeChassis Mount
Package / CaseISOTOPConfigurationSingle Dual Source
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.08 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)42 SDrain-source Breakdown Voltage500 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current53 A
Power Dissipation460000 mWMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 65 C
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names497-2776-5
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
Page 1/8

Download datasheet (279Kb)Embed
Next
TYPE
V
DSS
STE53NC50
500V
n
TYPICAL R
(on) = 0.07
DS
n
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
n
n
NEW HIGH VOLTAGE BENCHMARK
n
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II is the evolution of the first
generation of MESH OVERLAY
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
n
n
SWITH MODE POWER SUPPLIES (SMPS)
n
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol
V
Drain-source Voltage (V
DS
V
Drain-gate Voltage (R
DGR
V
Gate- source Voltage
GS
I
Drain Current (continuos) at T
D
I
Drain Current (continuos) at T
D
l
I
(
)
Drain Current (pulsed)
DM
P
Total Dissipation at T
TOT
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
V
Insulation Winthstand Voltage (AC-RMS)
ISO
T
Storage Temperature
stg
T
Max. Operating Junction Temperature
j
(•)Pulse width limited by safe operating area
May 2002
N-CHANNEL 500V - 0.070 - 53A ISOTOP
R
I
DS(on)
D
< 0.08
53 A
™.
The layout re-
Parameter
= 0)
GS
= 20 k )
GS
= 25°C
C
= 100°C
C
= 25°C
C
(1) I
SD
STE53NC50
PowerMesh™II MOSFET
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
Value
500
500
±30
53
33
212
460
3.68
3
2500
– 65 to 150
150
53A, di/dt 100 A/ s, V
24V, Tj T
DD
jMAX
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
1/8

STE53NC50 Summary of contents

  • Page 1

    ... N-CHANNEL 500V - 0.070 - 53A ISOTOP R I DS(on) D < 0. ™. The layout re- Parameter = 25° 100° 25° STE53NC50 PowerMesh™II MOSFET ISOTOP INTERNAL SCHEMATIC DIAGRAM Value 500 500 ± 212 460 3.68 3 2500 – 150 150 53A, di/dt 100 24V jMAX Unit ...

  • Page 2

    ... STE53NC50 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthc-h Thermal Resistance Case-heatsink with Conductive Grease Applied AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter ...

  • Page 3

    ... Test Conditions V = 400V 53A 4 10V G GS (see test circuit, Figure 5) Test Conditions I = 53A 53A, di/dt = 100A/µ 70V 150° (see test circuit, Figure 5) Thermal Impedence STE53NC50 Min. Typ. Max. Unit 310 434 150 nC Min. Typ. Max. Unit Min. Typ. Max. ...

  • Page 4

    ... STE53NC50 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

  • Page 5

    ... Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STE53NC50 5/8 ...

  • Page 6

    ... STE53NC50 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

  • Page 7

    ... STE53NC50 MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 0.169 0.594 1.193 1.503 0.322 7/8 ...

  • Page 8

    ... STE53NC50 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...