STE53NC50 STMicroelectronics, STE53NC50 Datasheet

MOSFET N-CH 500V 53A ISOTOP

STE53NC50

Manufacturer Part Number
STE53NC50
Description
MOSFET N-CH 500V 53A ISOTOP
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet

Specifications of STE53NC50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
80 mOhm @ 27A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
53A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
434nC @ 10V
Input Capacitance (ciss) @ Vds
11200pF @ 25V
Power - Max
460W
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.08 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
42 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
53 A
Power Dissipation
460000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2776-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STE53NC50
Manufacturer:
MITSUBISHI
Quantity:
1 000
Part Number:
STE53NC50
Quantity:
214
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n
n
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DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
n
n
n
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
May 2002
STE53NC50
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
dv/dt (1)
Symbol
I
V
DM
P
V
V
V
T
DGR
I
I
TOT
T
ISO
stg
DS
GS
D
D
TYPE
j
(
l
)
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (AC-RMS)
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.07
500V
V
II is the evolution of the first
DSS
< 0.08
R
DS(on)
C
™.
GS
N-CHANNEL 500V - 0.070 - 53A ISOTOP
Parameter
= 25°C
GS
= 20 k )
The layout re-
= 0)
C
C
= 25°C
= 100°C
53 A
I
D
(1) I
SD
INTERNAL SCHEMATIC DIAGRAM
53A, di/dt 100 A/ s, V
PowerMesh™II MOSFET
– 65 to 150
ISOTOP
Value
DD
2500
STE53NC50
3.68
500
500
±30
212
460
150
53
33
3
24V, Tj T
jMAX
W/°C
V/ns
Unit
°C
°C
W
V
V
V
A
A
A
V
1/8

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STE53NC50 Summary of contents

Page 1

... N-CHANNEL 500V - 0.070 - 53A ISOTOP R I DS(on) D < 0. ™. The layout re- Parameter = 25° 100° 25° STE53NC50 PowerMesh™II MOSFET ISOTOP INTERNAL SCHEMATIC DIAGRAM Value 500 500 ± 212 460 3.68 3 2500 – 150 150 53A, di/dt 100 24V jMAX Unit ...

Page 2

... STE53NC50 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthc-h Thermal Resistance Case-heatsink with Conductive Grease Applied AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter ...

Page 3

... Test Conditions V = 400V 53A 4 10V G GS (see test circuit, Figure 5) Test Conditions I = 53A 53A, di/dt = 100A/µ 70V 150° (see test circuit, Figure 5) Thermal Impedence STE53NC50 Min. Typ. Max. Unit 310 434 150 nC Min. Typ. Max. Unit Min. Typ. Max. ...

Page 4

... STE53NC50 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STE53NC50 5/8 ...

Page 6

... STE53NC50 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... STE53NC50 MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 0.169 0.594 1.193 1.503 0.322 7/8 ...

Page 8

... STE53NC50 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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