STE53NC50 STMicroelectronics, STE53NC50 Datasheet - Page 2

• Manufacturer Part Number: STE53NC50
• Description: MOSFET N-CH 500V 53A ISOTOP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STE53NC50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 27A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 53A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 434nC @ 10V
• Input Capacitance (ciss) @ Vds: 11200pF @ 25V
• Power - Max: 460W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 42 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 53 A
• Power Dissipation: 460000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2776-5

STE53NC50
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2/8
Rthj-case
V
Symbol
Symbol
Symbol
Symbol
R
V
Rthc-h
(BR)DSS
g
I
I
C
DS(on)
C
E
GS(th)
C
fs
I
GSS
DSS
AR
oss
AS
rss
iss
(1)
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Thermal Resistance Junction-case
Thermal Resistance Case-heatsink with Conductive
Grease Applied
Parameter
Parameter
Parameter
j
DS
= 25 °C, I
= 0)
GS
= 0)
D
= I
j
max)
AR
Parameter
, V
DD
I
V
V
V
V
V
V
I
D
D
V
= 50 V)
DS
DS
GS
DS
GS
DS
DS
= 250 µA, V
= 15 A
= Max Rating
= Max Rating, T
= V
> I
= ± 30V
= 10V, I
= 25V, f = 1 MHz, V
D(on)
Test Conditions
Test Conditions
Test Conditions
GS
, I
D
x R
D
= 27A
GS
= 250µA
DS(on)max,
Max
= 0
C
= 125 °C
GS
= 0
Min.
Min.
Min.
500
2
0.272
0.05
Max Value
1043
1350
Typ.
Typ.
0.07
Typ.
11.2
115
53
42
3
Max.
±100
Max.
Max.
0.08
100
10
4
°C/W
°C/W
Unit
Unit
Unit
Unit
mJ
µA
µA
nA
nF
pF
pF
A
V
V
S