MOSFET N-CH 150V 310A SOT227

IXFN360N15T2

Manufacturer Part NumberIXFN360N15T2
DescriptionMOSFET N-CH 150V 310A SOT227
ManufacturerIXYS
SeriesGigaMOS™
TypeGigaMOS Trench T2 HiperFet
IXFN360N15T2 datasheet
 

Specifications of IXFN360N15T2

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs4 mOhm @ 60A, 10VDrain To Source Voltage (vdss)150V
Current - Continuous Drain (id) @ 25° C310AVgs(th) (max) @ Id5V @ 8mA
Gate Charge (qg) @ Vgs715nC @ 10VInput Capacitance (ciss) @ Vds47500pF @ 25V
Power - Max1070WMounting TypeChassis Mount
Package / CaseSOT-227, miniBLOCProductMOSFET Gate Drivers
Rise Time170 nsFall Time265 ns
Supply Current100 AMaximum Power Dissipation1070 W
Maximum Operating Temperature+ 175 CMounting StyleSMD/SMT
Maximum Turn-off Delay Time115 nsMaximum Turn-on Delay Time50 ns
Minimum Operating Temperature- 55 CNumber Of DriversSingle
Number Of Outputs1Output Current310 A
Output Voltage150 VVdss, Max, (v)150
Id(cont), Tc=25°c, (a)310Rds(on), Max, Tj=25°c, (?)0.004
Ciss, Typ, (pf)47500Qg, Typ, (nc)715
Pd, (w)1070Rthjc, Max, (k/w)0.14
Package StyleSOT227Lead Free Status / RoHS StatusLead free / RoHS Compliant
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GigaMOS
TrenchT2
TM
HiperFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
V
T
= 25°C to 175°C
DSS
J
V
T
= 25°C to 175°C, R
DGR
J
V
Continuous
GSS
V
Transient
GSM
I
T
= 25°C (Chip Capability)
D25
C
I
External Lead Current Limit
L(RMS)
I
T
= 25°C, Pulse Width Limited by T
DM
C
I
T
= 25°C
A
C
E
T
= 25°C
AS
C
≤ I
≤ V
dV/dt
I
, V
, T
S
DM
DD
DSS
P
T
= 25°C
D
C
T
J
T
JM
T
stg
T
1.6mm (0.062 in.) from Case for 10s
L
T
Plastic Body for 10s
SOLD
V
50/60 Hz, RMS
t = 1 minute
ISOL
≤ 1mA
I
t = 1 second
ISOL
M
Mounting Torque
d
Terminal Connection Torque
Weight
Symbol
Test Conditions
(T
= 25°C, Unless Otherwise Specified)
J
BV
V
= 0V, I
= 3mA
DSS
GS
D
V
V
= V
, I
= 8mA
GS(th)
DS
GS
D
= ±20V, V
I
V
= 0V
GSS
GS
DS
I
V
= V
, V
= 0V
DSS
DS
DSS
GS
R
V
= 10V, I
= 60A, Note 1
DS(on)
GS
D
© 2009 IXYS CORPORATION, All Rights Reserved
Advance Technical Information
IXFN360N15T2
Maximum Ratings
150
= 1MΩ
150
GS
±20
±30
310
200
900
JM
100
TBD
≤ 175°C
20
J
1070
-55 ... +175
175
-55 ... +175
300
260
2500
3000
1.5/13
1.3/11.5
30
Characteristic Values
Min.
Typ.
150
2.5
T
= 150°C
J
V
=
150V
DSS
I
=
310A
D25
4.0mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤
R
DS(on)
t
150ns
≤ ≤ ≤ ≤ ≤
rr
miniBLOC, SOT-227
E153432
S
G
V
V
V
V
A
G = Gate
D = Drain
A
S = Source
A
A
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
J
( Gate Return ) Terminal.
V/ns
Features
W
°C
International Standard Package
°C
miniBLOC, with Aluminium Nitride
°C
Isolation
Isolation voltage 2500
°C
High Current Handling Capability
°C
Fast Intrinsic Diode
V~
Avalanche Rated
V~
Low R
DS(on)
Nm/lb.in.
Advantages
Nm/lb.in.
g
Easy to Mount
Space Savings
High Power Density
Applications
Max.
V
Synchronous Recification
DC-DC Converters
5.0
V
Battery Chargers
±200 nA
Switched-Mode and Resonant-Mode
Power Supplies
μA
50
DC Choppers
5 mA
AC Motor Drives
4.0 mΩ
Uninterruptible Power Supplies
High Speed Power Switching
Applications
S
D
V~
DS100180(08/09)

IXFN360N15T2 Summary of contents

  • Page 1

    ... GSS DSS DS DSS 10V 60A, Note 1 DS(on © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFN360N15T2 Maximum Ratings 150 = 1MΩ 150 GS ±20 ±30 310 200 900 JM 100 TBD ≤ 175° 1070 -55 ... +175 175 -55 ... +175 300 260 2500 3000 1 ...

  • Page 2

    ... I = 180A 185 DSS D 200 0.05 Characteristic Values Min. Typ. JM 0.50 9.00 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN360N15T2 Max. SOT-227B (IXFN) Outline (M4 screws (4x) supplied 0.14 °C/W °C/W Max. 360 A 1440 A 1.2 V 150 ns μC A ...

  • Page 3

    ... Value vs. D 220 200 180 160 T = 175ºC J 140 120 100 25º 200 250 300 350 IXFN360N15T2 Fig. 2. Extended Output Characteristics @ T = 25º 10V Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V ...

  • Page 4

    ... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. = 150ºC J 25ºC - 40ºC 4.5 5.0 5 25ºC J 0.7 0.8 0.9 1.0 1.1 1,000.0 C iss 100.0 C oss 10.0 C rss Volts IXFN360N15T2 Fig. 8. Transconductance 450 400 350 300 250 200 150 100 100 120 I - Amperes D Fig. 10. Gate Charge 75V 9 ...

  • Page 5

    ... V = 10V 75V 700 DS 200 600 180 500 160 400 140 300 120 200 100 100 1 140 160 180 200 IXFN360N15T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 1Ω 10V 75V 25º 125º 100 120 140 I - Amperes D Fig. 16. Resistive Turn-off Switching Times vs ...

  • Page 6

    ... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance Fig. 19. Maximium Transient Thermal Impedance .sadgsfgsf 0.001 0.01 Pulse Width - Seconds IXFN360N15T2 0.1 1 IXYS REF: F_360N15T2 (9V)08-19-09 10 ...