IXFN360N15T2 IXYS, IXFN360N15T2 Datasheet - Page 4

MOSFET N-CH 150V 310A SOT227

IXFN360N15T2

Manufacturer Part Number
IXFN360N15T2
Description
MOSFET N-CH 150V 310A SOT227
Manufacturer
IXYS
Series
GigaMOS™r
Type
GigaMOS Trench T2 HiperFetr
Datasheet

Specifications of IXFN360N15T2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
310A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
715nC @ 10V
Input Capacitance (ciss) @ Vds
47500pF @ 25V
Power - Max
1070W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Product
MOSFET Gate Drivers
Rise Time
170 ns
Fall Time
265 ns
Supply Current
100 A
Maximum Power Dissipation
1070 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Maximum Turn-off Delay Time
115 ns
Maximum Turn-on Delay Time
50 ns
Minimum Operating Temperature
- 55 C
Number Of Drivers
Single
Number Of Outputs
1
Output Current
310 A
Output Voltage
150 V
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
310
Rds(on), Max, Tj=25°c, (?)
0.004
Ciss, Typ, (pf)
47500
Qg, Typ, (nc)
715
Pd, (w)
1070
Rthjc, Max, (k/w)
0.14
Package Style
SOT227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN360N15T2
Manufacturer:
CUI
Quantity:
23 000
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
200
180
160
140
120
100
350
300
250
200
150
100
100
50
80
60
40
20
0
0
0.2
2.5
0
f
= 1 MHz
0.3
5
3.0
0.4
Fig. 9. Forward Voltage Drop of
10
Fig. 7. Input Admittance
0.5
3.5
Fig. 11. Capacitance
15
Intrinsic Diode
V
T
GS
J
V
0.6
= 150ºC
V
SD
DS
- Volts
T
4.0
- Volts
20
J
- Volts
= 150ºC
- 40ºC
0.7
25ºC
25
C iss
C oss
C rss
4.5
0.8
T
J
30
= 25ºC
0.9
5.0
35
1.0
5.5
1.1
40
1,000.0
100.0
10.0
450
400
350
300
250
200
150
100
1.0
0.1
50
10
0
9
8
7
6
5
4
3
2
1
0
1
0
0
R
DS(on)
External Lead Limit
T
T
Single Pulse
V
I
I
J
C
D
G
DS
20
= 175ºC
= 25ºC
= 180A
= 10mA
100
= 75V
Limit
Fig. 12. Forward-Bias Safe Operating Area
40
200
60
Fig. 8. Transconductance
10
Fig. 10. Gate Charge
80
300
Q
G
I
- NanoCoulombs
V
D
100
DS
- Amperes
IXFN360N15T2
- Volts
400
120
500
140
100
DC
T
J
160
= - 40ºC
600
25µs
100µs
1ms
10ms
100ms
IXYS REF: F_360N15T2 (9V)08-19-09
25ºC
150ºC
180
700
200
1,000
220
800

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