MOSFET N-CH 500V 70A ISOTOP

STE70NM50

Manufacturer Part NumberSTE70NM50
DescriptionMOSFET N-CH 500V 70A ISOTOP
ManufacturerSTMicroelectronics
SeriesMDmesh™
STE70NM50 datasheet
 


Specifications of STE70NM50

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs50 mOhm @ 30A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C70AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs266nC @ 10VInput Capacitance (ciss) @ Vds7500pF @ 25V
Power - Max600WMounting TypeChassis Mount
Package / CaseISOTOPConfigurationSingle Dual Source
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.05 Ohms
Forward Transconductance Gfs (max / Min)35 SDrain-source Breakdown Voltage500 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current70 A
Power Dissipation600 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 65 C
Continuous Drain Current Id30ADrain Source Voltage Vds500V
On Resistance Rds(on)45mohmRds(on) Test Voltage Vgs10V
Threshold Voltage Vgs Typ4VRohs CompliantYes
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names497-3172-5
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TYPE
V
DSS
STE70NM50
500V
n
TYPICAL R
(on) = 0.045
DS
n
HIGH dv/dt AND AVALANCHE CAPABILITIES
IMPROVED ESD CAPABILITY
n
n
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
n
TIGHT PROCESS CONTROL
n
n
INDUSTRY’S LOWEST ON-RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
Drain-source Voltage (V
DS
V
Drain-gate Voltage (R
DGR
V
Gate- source Voltage
GS
I
Drain Current (continuous) at T
D
I
Drain Current (continuous) at T
D
l
I
(
)
Drain Current (pulsed)
DM
P
Total Dissipation at T
TOT
V
Gate source ESD(HBM-C=100pF, R=15K
ESD(G-S)
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
T
Storage Temperature
stg
T
Max. Operating Junction Temperature
j
(•)Pulse width limited by safe operating area
September 2002
N-CHANNEL 500V - 0.045 - 70A ISOTOP
Zener-Protected MDmesh™Power MOSFET
R
I
DS(on)
D
< 0.05
70 A
Parameter
= 0)
GS
= 20 k )
GS
= 25°C
C
= 100°C
C
= 25°C
C
(1)I
SD
STE70NM50
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
Value
500
500
±30
70
44
280
600
6
5
15
–65 to 150
150
60A, di/dt 400A/µs, V
V
, T
DD
(BR)DSS
j
Unit
V
V
V
A
A
A
W
KV
W/°C
V/ns
°C
°C
T
JMAX
1/8

STE70NM50 Summary of contents

  • Page 1

    ... September 2002 N-CHANNEL 500V - 0.045 - 70A ISOTOP Zener-Protected MDmesh™Power MOSFET R I DS(on) D < 0. Parameter = 25° 100° 25°C C (1)I SD STE70NM50 ISOTOP INTERNAL SCHEMATIC DIAGRAM Value 500 500 ± 280 600 –65 to 150 150 60A, di/dt 400A/µ (BR)DSS j Unit ...

  • Page 2

    ... STE70NM50 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage ...

  • Page 3

    ... 60A, di/dt = 100A/µ 100 25° (see test circuit, Figure 60A, di/dt = 100A/µ 100 150° (see test circuit, Figure 5) Test Conditions Igs=± 1mA (Open Drain) STE70NM50 Min. Typ. Max. Unit 190 266 Min. Typ. Max. Unit 108 ns Min ...

  • Page 4

    ... STE70NM50 Safe Operating Area Output Characteristics Transconductance 4/8 Thermal Impedance Transfer Characteristics Static Drain-source On Resistance ...

  • Page 5

    ... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temp. Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs Temperature STE70NM50 5/8 ...

  • Page 6

    ... STE70NM50 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

  • Page 7

    ... STE70NM50 MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 0.169 0.594 1.193 1.503 0.322 7/8 ...

  • Page 8

    ... STE70NM50 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...