STE70NM50 STMicroelectronics, STE70NM50 Datasheet - Page 3

• Manufacturer Part Number: STE70NM50
• Description: MOSFET N-CH 500V 70A ISOTOP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STE70NM50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 266nC @ 10V
• Input Capacitance (ciss) @ Vds: 7500pF @ 25V
• Power - Max: 600W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.05 Ohms
• Forward Transconductance Gfs (max / Min): 35 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 70 A
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 45mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3172-5

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the 25V Zener voltage is appropriate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
Symbol
Symbol
Symbol
Symbol
I
V
BV
SDM
t
t
SD
r(Voff)
Q
d(on)
Q
I
I
I
Q
Q
2. Pulse width limited by safe operating area.
Q
SD
t
rrm
t
rrm
t
t
t
GSO
rr
rr
gd
c
r
gs
f
rr
rr
g
(1)
(2)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Gate-Source Breakdown
Voltage
Parameter
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
I
V
(see test circuit, Figure 5)
Igs=± 1mA (Open Drain)
V
R
(see test circuit, Figure 5)
SD
SD
SD
DD
DD
GS
DD
DD
G
DD
G
= 4.7
= 4.7
= 60A, V
= 60A, di/dt = 100A/µs,
= 60A, di/dt = 100A/µs,
= 250V, I
= 400V, I
= 10V
= 100 V, T
= 100 V, T
= 400V, I
Test Conditions
Test Conditions
Test Conditions
Test Conditions
V
V
GS
GS
GS
D
D
D
j
j
= 30A
= 60A,
= 60A,
= 0
= 10V
= 25°C
= 150°C
= 10V
Min.
Min.
Min.
Min.
30
Typ.
Typ.
13.4
Typ.
190
108
532
636
9.9
51
58
53
97
37
42
Typ.
51
46
Max.
Max.
Max.
266
240
1.5
Max.
60
STE70NM50
Unit
Unit
Unit
nC
nC
nC
µC
µC
ns
ns
ns
ns
Unit
ns
ns
ns
A
A
V
A
A
V
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