STE70NM50 STMicroelectronics, STE70NM50 Datasheet - Page 6

MOSFET N-CH 500V 70A ISOTOP

STE70NM50

Manufacturer Part Number
STE70NM50
Description
MOSFET N-CH 500V 70A ISOTOP
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STE70NM50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
50 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
266nC @ 10V
Input Capacitance (ciss) @ Vds
7500pF @ 25V
Power - Max
600W
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.05 Ohms
Forward Transconductance Gfs (max / Min)
35 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
70 A
Power Dissipation
600 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Continuous Drain Current Id
30A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
45mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3172-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STE70NM50
Manufacturer:
ST
0
Part Number:
STE70NM50
Quantity:
215
Part Number:
STE70NM50FD
Manufacturer:
ST
0
STE70NM50
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit

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