STE70NM50 STMicroelectronics, STE70NM50 Datasheet - Page 7

• Manufacturer Part Number: STE70NM50
• Description: MOSFET N-CH 500V 70A ISOTOP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STE70NM50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 266nC @ 10V
• Input Capacitance (ciss) @ Vds: 7500pF @ 25V
• Power - Max: 600W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.05 Ohms
• Forward Transconductance Gfs (max / Min): 35 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 70 A
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 45mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3172-5

DIM.
G
M
O
A
B
C
D
E
F
H
K
N
J
L
N
25.15
MIN.
11.8
1.95
0.75
12.6
31.5
14.9
30.1
37.8
8.9
4.1
7.8
4
4
O
J
G
K
L
M
ISOTOP MECHANICAL DATA
TYP.
mm
MAX.
12.2
2.05
0.85
12.8
25.5
31.7
15.1
30.3
38.2
9.1
4.3
8.2
0.466
0.350
0.076
0.029
0.496
0.990
1.240
0.157
0.161
0.586
1.185
1.488
0.157
0.307
MIN.
B
A
C
TYP.
inch
STE70NM50
MAX.
0.358
1.003
0.169
0.322
0.480
0.080
0.033
0.503
1.248
0.594
1.193
1.503
7/8