IXFN24N100 IXYS, IXFN24N100 Datasheet

MOSFET N-CH 1KV 24A SOT-227B

IXFN24N100

Manufacturer Part Number
IXFN24N100
Description
MOSFET N-CH 1KV 24A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFN24N100

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
390 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
5.5V @ 8mA
Gate Charge (qg) @ Vgs
267nC @ 10V
Input Capacitance (ciss) @ Vds
8700pF @ 25V
Power - Max
568W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.39 Ohms
Forward Transconductance Gfs (max / Min)
22 s
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
24 A
Power Dissipation
595 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
24
Rds(on), Max, Tj=25°c, (?)
0.39
Ciss, Typ, (pf)
8700
Qg, Typ, (nc)
267
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
568
Rthjc, Max, (ºc/w)
0.22
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN24N100
Manufacturer:
IXYS
Quantity:
27
Part Number:
IXFN24N100
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Part Number:
IXFN24N100
Quantity:
102
HiPerFET
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
V
M
Weight
GSS
DSS
D25
DM
A
J
JM
stg
L
GS(th)
DSS
DGR
GSS
GSM
AS
D
ISOL
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
V
V
V
V
V
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
≤ 1mA
= 0V, I
= V
= ±20V, V
= V
= 0V
= 10V, I
DM
GS
, V
DSS
Power
, I
D
DD
D
D
= 3mA
= 8mA
= 12A, Note 1
≤ V
DS
= 0V
DSS
, T
J
GS
≤ 150°C
= 1MΩ
T
J
= 125°C
t = 1s
t = 1min
JM
IXFN24N100
1000
3.0
Min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.3/11.5
Typ.
1.5/13
1000
1000
2500
3000
± 30
±20
568
150
300
24
96
24
30
3
5
Max.
±200
100
390
5.5
Nm/lb.in.
Nm/lb.in.
2
V/ns
mA
μA
nA
V~
V~
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
J
V
I
R
t
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
Applications
Advantages
miniBLOC, SOT-227 B
D25
rr
International standard package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Avalanche rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount
Space savings
High power density
DS(on)
DSS
E153432
DS (on)
= 24A
= 1000V
≤ ≤ ≤ ≤ ≤ 390mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 250ns
HDMOS
G
D = Drain
S
TM
DS98597H(10/08)
process
D
S

Related parts for IXFN24N100

IXFN24N100 Summary of contents

Page 1

... GS(th ±20V GSS DSS DS DSS 10V 12A, Note 1 DS(on © 2008 IXYS CORPORATION, All rights reserved IXFN24N100 Maximum Ratings 1000 = 1MΩ 1000 GS ±20 ± ≤ 150° 568 -55 ... +150 150 -55 ... +150 300 t = 1min 2500 3000 1.5/13 1.3/11.5 30 Characteristic Values Min. ...

Page 2

... I = 12A 52 DSS D 142 0.05 Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. JM 1.0 8.0 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN24N100 Max. SOT-227B Outline °C/W 0.22 °C/W Max 1.5 V 250 ns μC A 6,404,065 B1 6,683,344 ...

Page 3

... V = 10V GS 2.6 2.4 2.2 6V 2.0 1.8 1.6 1.4 1.2 1.0 5V 0.8 0.6 0 12A Value 125º 25º IXFN24N100 Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V 24A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. ...

Page 4

... IXYS reserves the right to change limits, test conditions, and dimensions. = 125ºC J 25ºC - 40ºC 5.5 6.0 6.5 7 25ºC J 0.8 0.9 1.0 1.1 1.2 1.000 C iss 0.100 C oss 0.010 IXFN24N100 Fig. 8. Transconductance 125º Amperes D Fig. 10. Gate Charge 500V 12A ...

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