MOSFET N-CH 500V 51A SOT-227

 

APT51M50J

Manufacturer Part NumberAPT51M50J
DescriptionMOSFET N-CH 500V 51A SOT-227
ManufacturerMicrosemi Power Products Group
APT51M50J datasheets

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Specifications of APT51M50J

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs75 mOhm @ 37A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C51AVgs(th) (max) @ Id5V @ 2.5mA
Gate Charge (qg) @ Vgs290nC @ 10VInput Capacitance (ciss) @ Vds11600pF @ 25V
Power - Max480WMounting TypeChassis Mount
Package / CaseSOT-227, miniBLOCLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesAPT51M50JMI
APT51M50JMI		  
APT51M50J PDF datasheetAPT51M50J PDF datasheet #2
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N-Channel MOSFET
™
Power MOS 8
is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low C
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
FEATURES
• Fast switching with low EMI/RFI
• Low R
DS(on)
• Ultra low C
for improved noise immunity
rss
• Low gate charge
• Avalanche energy rated
• RoHS compliant
Absolute Maximum Ratings
Symbol
Parameter
Continuous Drain Current @ T
I
D
Continuous Drain Current @ T
I
1
Pulsed Drain Current
DM
V
Gate-Source Voltage
GS
E
Single Pulse Avalanche Energy
AS
I
Avalanche Current, Repetitive or Non-Repetitive
AR
Thermal and Mechanical Characteristics
Symbol
Characteristic
P
Total Power Dissipation @ T
D
R
Junction to Case Thermal Resistance
θ JC
R
Case to Sink Thermal Resistance, Flat, Greased Surface
θ CS
T
,T
Operating and Storage Junction Temperature Range
J
STG
V
RMS Voltage
(50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
Isolation
W
Package Weight
T
Torque
Terminals and Mounting Screws.
"Miller" capaci-
rss
TYPICAL APPLICATIONS
• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters
= 25°C
C
= 100°C
C
2
= 25°C
C
Microsemi Website - http://www.microsemi.com
APT51M50J
500V, 51A, 0.075Ω Max
"UL Recognized"
file # E145592
ISOTOP
®
D
APT51M50J
Single die MOSFET
G
S
Ratings
Unit
51
32
A
230
±30
V
1580
mJ
37
A
Min
Typ
Max
Unit
480
W
0.26
°C/W
0.15
-55
150
°C
V
2500
oz
1.03
g
29.2
in·lbf
10
N·m
1.1

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APT51M50J Summary of contents

  • Page 1

    ... Single switch forward • Flyback • Inverters = 25° 100° 25°C C Microsemi Website - http://www.microsemi.com APT51M50J 500V, 51A, 0.075Ω Max "UL Recognized" file # E145592 ISOTOP ® D APT51M50J Single die MOSFET G S Ratings Unit 230 ±30 V 1580 Min Typ Max ...

  • Page 2

    Symbol Parameter V Drain-Source Breakdown Voltage BR(DSS) ∆V /∆T Breakdown Voltage Temperature Coefficient BR(DSS Drain-Source On Resistance DS(on) V Gate-Source Threshold Voltage GS(th) ∆V /∆T Threshold Voltage Temperature Coefficient GS(th Zero Gate Voltage Drain Current DSS ...

  • Page 3

    V = 10V -55° 25° 125°C J NORMALIZED 10V @ 37A GS = 7,8 & 10V 4.5V V > MAX. DS ...

  • Page 4

    R ds(on) 100ms Dissipated Power (Watts 4.0 (.157) (2 places) ® ISOTOP is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 ...

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