APTM100UM65SAG Microsemi Power Products Group, APTM100UM65SAG Datasheet

MOSFET N-CH 1000V 145A SP6

APTM100UM65SAG

Manufacturer Part Number
APTM100UM65SAG
Description
MOSFET N-CH 1000V 145A SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM100UM65SAG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
78 mOhm @ 72.5A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
145A
Vgs(th) (max) @ Id
5V @ 20mA
Gate Charge (qg) @ Vgs
1068nC @ 10V
Input Capacitance (ciss) @ Vds
28500pF @ 25V
Power - Max
3250W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APTM100UM65SAGMI
APTM100UM65SAGMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APTM100UM65SAG
Manufacturer:
BROADCOM
Quantity:
1 760
Absolute maximum ratings
Symbol
R
V
V
E
E
I
I
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
SK
MOSFET Power Module
S
G
SK
G
Series & parallel diodes
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Single switch
S
CR1
Parameter
Q1
D
D
www.microsemi.com
Application
Features
Benefits
V
R
I
T
T
T
D
c
c
c
DSS
DSon
= 25°C
= 80°C
= 25°C
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Power MOS 7
Kelvin source for easy drive
Very low stray inductance
High level of integration
AlN substrate for improved thermal performance
Outstanding performance
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
= 145A @ Tc = 25°C
-
-
-
-
-
-
-
APTM100UM65SAG
= 1000V
Low R
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Symmetrical design
M5 power connectors
= 65mΩ typ @ Tj = 25°C
Max ratings
DSon
®
1000
3250
3200
145
110
580
±30
MOSFETs
78
30
50
at high
Unit
mΩ
mJ
W
V
A
V
A
frequency
1 – 6

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APTM100UM65SAG Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM100UM65SAG V = 1000V DSS R = 65mΩ typ @ Tj = 25°C DSon I = 145A @ Tc = 25°C D Application • ...

Page 2

... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTM100UM65SAG = 25°C unless otherwise specified j Test Conditions Min V = 0V,V = 1000V T = 25° 0V,V = 800V T = 125°C GS ...

Page 3

... Operating junction temperature range J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM100UM65SAG Test Conditions Min 1000 T = 25° =1000V 125° 80°C I ...

Page 4

... DS(on) 1.4 Normalized to V =10V @ 72.5A 1.3 GS 1.2 1.1 V =10V =20V GS 0.9 0 160 I , Drain Current (A) D APTM100UM65SAG Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 480 400 250µs pulse test @ < 0.5 duty cycle 6.5V 320 240 6V 160 5. Drain Current vs Case Temperature ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss Crss 1000 100 Drain to Source Voltage (V) DS APTM100UM65SAG ON resistance vs Temperature 2.5 V =10V GS I =72.5A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM100UM65SAG 100 V ...

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