STE40NC60 STMicroelectronics, STE40NC60 Datasheet

MOSFET N-CH 600V 40A ISOTOP

STE40NC60

Manufacturer Part Number
STE40NC60
Description
MOSFET N-CH 600V 40A ISOTOP
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet

Specifications of STE40NC60

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
430nC @ 10V
Input Capacitance (ciss) @ Vds
11100pF @ 25V
Power - Max
460W
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.13 Ohms
Forward Transconductance Gfs (max / Min)
42 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
40 A
Power Dissipation
460 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3169-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STE40NC60
Manufacturer:
POWEREX
Quantity:
1 000
Part Number:
STE40NC60
Manufacturer:
ST
0
Part Number:
STE40NC60
Quantity:
212
n
n
n
n
n
DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
n
n
n
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
May 2002
STE40NC60
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
dv/dt (1)
Symbol
I
V
DM
P
V
V
V
T
DGR
I
I
TOT
T
ISO
stg
DS
GS
D
D
TYPE
j
(
l
)
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (AC-RMS)
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.098
600V
V
II is the evolution of the first
DSS
< 0.13
R
DS(on)
C
™.
GS
N-CHANNEL 600V - 0.098 - 40A ISOTOP
Parameter
= 25°C
GS
= 20 k )
The layout re-
= 0)
C
C
= 25°C
= 100°C
40 A
I
D
(1) I
SD
INTERNAL SCHEMATIC DIAGRAM
40A, di/dt 100 A/ s, V
PowerMesh™II MOSFET
ISOTOP
–65 to 150
Value
DD
2500
STE40NC60
3.68
600
600
±30
160
460
150
40
23
3
24V, Tj T
jMAX
W/°C
V/ns
Unit
°C
°C
W
V
V
V
A
A
A
V
1/8

Related parts for STE40NC60

STE40NC60 Summary of contents

Page 1

... N-CHANNEL 600V - 0.098 - 40A ISOTOP R I DS(on) D < 0. ™. The layout re- Parameter = 25° 100° 25° STE40NC60 PowerMesh™II MOSFET ISOTOP INTERNAL SCHEMATIC DIAGRAM Value 600 600 ± 160 460 3.68 3 2500 –65 to 150 150 40A, di/dt 100 24V jMAX Unit ...

Page 2

... STE40NC60 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthc-h Thermal Resistance Case-heatsink with Conductive Grease Applied AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter ...

Page 3

... GS Test Conditions V = 480V 40A 4 10V G GS (see test circuit, Figure 5) Test Conditions I = 40A di/dt = 100 A/µ 150 ° (see test circuit, Figure 5) Thermal Impedence STE40NC60 Min. Typ. Max. Unit 307.5 430 146.5 nC Min. Typ. Max. Unit Min. Typ. Max. Unit 40 ...

Page 4

... STE40NC60 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STE40NC60 5/8 ...

Page 6

... STE40NC60 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... STE40NC60 MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 0.169 0.594 1.193 1.503 0.322 7/8 ...

Page 8

... STE40NC60 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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