IXFN106N20 IXYS, IXFN106N20 Datasheet
IXFN106N20
Manufacturer Part Number
IXFN106N20
Description
MOSFET N-CH 200V 106A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFK90N20.pdf
(4 pages)
Specifications of IXFN106N20
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
106A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
380nC @ 10V
Input Capacitance (ciss) @ Vds
9000pF @ 25V
Power - Max
520W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.02 Ohms
Forward Transconductance Gfs (max / Min)
60 s
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
106 A
Power Dissipation
520 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
106
Rds(on), Max, Tj=25°c, (?)
0.02
Ciss, Typ, (pf)
9000
Qg, Typ, (nc)
380
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
521
Rthjc, Max, (ºc/w)
0.24
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN106N20
Manufacturer:
IXYS
Quantity:
27
Company:
Part Number:
IXFN106N20
Manufacturer:
IXYS
Quantity:
200
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
D25
D80
DM
AR
GSS
DSS
J
JM
stg
L
DGR
AR
D
GH(th)
DSS
GS
GSM
ISOL
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
V
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
S
ISOL
C
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
£ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C, Chip capability
= 80°C, limited by external leads
= 25°C, pulse width limited by T
= 25°C
= 25°C
£ I
= 25°C
£ 1 mA
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
DM
TM
, di/dt £ 100 A/ms, V
GS
, I
D
D
DC
D
= 1 mA
DSS
= 8 mA
G
, V
= 0.5 • I
= 2 W
DS
t = 1 min
t = 1 s
= 0
D25
GS
= 1 MW
DD
T
T
IXFK90N20
IXFN100N20
IXFN106N20
£ V
J
J
(T
= 25°C
= 125°C
DSS
rr
J
= 25°C, unless otherwise specified)
JM
,
0.9/6
90N20 100N20 106N20
IXFK
min.
200
200
±20
±30
360
500
300
90
200
76
50
30
10
IXFK 90 N 20
IXFN 100 N 20
IXFN 106 N 20
5
Characteristic Values
Maximum Ratings
-
-
-
-55 ... +150
-55 ... +150
2
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
150
IXFN
100
200
200
±20
±30
400
520
50
30
30
5
max.
0.023
0.023
0.020
-
-
±200
400
4
2
30 mJ
5 V/ns
IXFN
200 V
200 V
106 A
424 A
20 V
20 V
mA
V~
V~
nA
mA
°C
°C
°C
°C
W
W
W
W
A
A
V
V
g
200 V
200 V
200 V
TO-264 AA (IXFK)
S
TO-264 AA
G
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
l
Applications
Advantages
miniBLOC, SOT-227 B (IXFN)
V
International standard packages
JEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount
Space savings
High power density
DSS
t
rr
E153432
£ 200 ns
DS (on)
D
S
G
100 A
HDMOS
106 A
90 A
D
I
D25
S
D = Drain
TAB = Drain
G
TM
process
92804H (7/97)
23 mW
23 mW
20 mW
R
S
DS(on)
D
(TAB)
1 - 4
S
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IXFN106N20 Summary of contents
Page 1
... Nm/lb.in Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 200 25° 125°C J D25 IXFK90N20 0.023 IXFN100N20 0.023 IXFN106N20 0.020 V I DSS D25 200 200 V 100 A 200 V 106 A £ 200 TO-264 AA TO-264 AA (IXFK) IXFN 200 V G 200 miniBLOC, SOT-227 B (IXFN) ...
Page 2
... J min. typ. max. IXFK90N20 IXFN100N20 IXFN106N20 IXFK90N20 IXFN100N20 IXFN106N20 JM = 100 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFN90N20 IXFN106N20 TO-264 AA Outline Dim. Millimeter Min. Max 4.82 5.13 A1 2.54 2. 2.00 2. ...
Page 3
... T - Degrees C C © 2000 IXYS All rights reserved IXFK100N20 15V GS 250 300 350 75 100 125 150 IXFN90N20 IXFN106N20 Fig. 2 Input Admittance 200 180 160 140 T = 25°C J 120 100 Volts GS Fig. 4 Temperature Dependence of Drain to Source Resistance 2.50 2.25 2.00 1.75 ...
Page 4
... Fig.10 Transient Thermal Impedance 0.5 0.1 0.01 0.001 © 2000 IXYS All rights reserved IXFK100N20 9000 8000 7000 6000 5000 4000 3000 2000 1000 = 25°C 1.0 1.2 0.01 Pulse Width - Seconds IXFN90N20 IXFN106N20 Fig.8 Capacitance Curves C iss f = 1MHz V = 25V DS C oss C rss Volts DS 0.1 ...