IXTN90P20P IXYS, IXTN90P20P Datasheet

MOSFET P-CH 200V 90A SOT227

IXTN90P20P

Manufacturer Part Number
IXTN90P20P
Description
MOSFET P-CH 200V 90A SOT227
Manufacturer
IXYS
Series
PolarP™r
Datasheet

Specifications of IXTN90P20P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
44 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
205nC @ 10V
Input Capacitance (ciss) @ Vds
12000pF @ 25V
Power - Max
890W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vdss, Max, (v)
-200.0
Id(cont), Tc=25°c, (a)
-90.0
Rds(on), Max, Tj=25°c, (?)
0.044
Ciss, Typ, (pf)
12000
Qg, Typ, (nc)
205
Trr, Typ, (ns)
315
Pd, (w)
890
Rthjc, Max, (k/w)
0.14
Package Style
SOT-227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarP
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS
I
Mounting Torque
Terminal Connection Torque
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1mA
= 0V, I
= V
= ±20V, V
= V
= -10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
= - 250μA
D
≤ V
= - 1mA
GS
DS
= 0.5 • I
= 0V
DSS
= 0V
, T
t = 1 minute
t = 1 second
J
D25
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXTN90P20P
- 2.0
- 200
Min.
-55 ... +150
-55 ... +150
Characteristic Values
Maximum Ratings
1.3/11.5
1.5/13
- 200
- 200
- 270
2500
3000
- 90
- 90
±20
±30
890
150
300
260
3.5
Typ.
10
30
- 250 μA
±100 nA
Nm/lb.in.
Nm/lb.in.
- 4.0
- 50 μA
Max.
44 mΩ
V/ns
V~
V~
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
miniBLOC, SOT-227
G = Gate
S = Source
Either Source Terminal at miniBLOC
can be used as Main or Kelvin Source.
Features
Advantages
Applications
D25
International Standard Package
Rugged PolarP
Avalanche Rated
Low Package Inductance
Easy to Mount
Space Savings
High Power Density
High-Side Switches
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
DS(on)
DSS
E153432
G
≤ ≤ ≤ ≤ ≤
=
=
S
D = Drain
TM
- 200V
- 90A
Process
44mΩ Ω Ω Ω Ω
D
DS99934B(03/09)
S

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IXTN90P20P Summary of contents

Page 1

... GS(th ±20V GSS DSS DS DSS -10V 0.5 • I DS(on © 2009 IXYS CORPORATION, All Rights Reserved IXTN90P20P Maximum Ratings - 200 = 1MΩ - 200 GS ±20 ± 270 3.5 ≤ 150° 890 -55 ... +150 150 -55 ... +150 300 260 2500 3000 1.5/13 1.3/11.5 30 Characteristic Values Min ...

Page 2

... Characteristic Values Min. Typ. JM 315 6 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTN90P20P Max. SOT-227B (IXTN) Outline (Μ4 σχρεωσ (4ξ) συππλιεδ 0.14 °C/W °C/W Max ...

Page 3

... IXYS CORPORATION, All Rights Reserved -240 = -10V - 9V -210 - 8V -180 - 7V -150 -120 - -2.5 -3.0 -3.5 -4 45A vs. D -100 T = 125º 25ºC J -150 -180 -210 -240 IXTN90P20P Fig. 2. Extended Output Characteristics @ 25º -10V - -60 - -12 -15 - Volts DS Fig Normalized to I DS(on) Junction Temperature 2 -10V 2.2 GS 2.0 1 90A D 1 ...

Page 4

... T = 25º -3.0 -3.5 -4.0 -4.5 - 1,000 C iss - 100 C oss - 10 C rss - 1 -25 -30 -35 - IXTN90P20P Fig. 8. Transconductance -20 -40 -60 - Amperes D Fig. 10. Gate Charge V = -100V 45A -1mA 100 120 140 Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area R Limit DS(on) 25µs 100µs 1ms 10ms ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTN90P20P 0.1 1 IXYS REF: T_90P20P(B9)03-25-09-D 10 ...

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