IXFN36N60 IXYS, IXFN36N60 Datasheet
IXFN36N60
Manufacturer Part Number
IXFN36N60
Description
MOSFET N-CH 600V 36A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFK32N60.pdf
(4 pages)
Specifications of IXFN36N60
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
180 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
325nC @ 10V
Input Capacitance (ciss) @ Vds
9000pF @ 25V
Power - Max
520W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.18 Ohms
Forward Transconductance Gfs (max / Min)
36 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
36 A
Power Dissipation
520 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
36
Rds(on), Max, Tj=25°c, (?)
0.18
Ciss, Typ, (pf)
9000
Qg, Typ, (nc)
325
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
521
Rthjc, Max, (ºc/w)
0.24
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN36N60
Manufacturer:
IXYS
Quantity:
27
Company:
Part Number:
IXFN36N60
Manufacturer:
IXYS
Quantity:
492
Preliminary Data
HiPerFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
©1996 IXYS Corporation. All rights reserved.
I
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700
XYS reserves the right to change limits, test conditions, and dimensions.
AR
DSS
D25
DM
GSS
J
JM
stg
L
DSS
DGR
GSM
AR
D
ISOL
DSS
GH(th)
GS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMSt = 1 min
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
V
Pulse test, t
ISOL
S
J
J
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C, Chip capability
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 V
= 0 V
= 10 V, I
150 C, R
I
Fax: 408-496-0670
DM
1 mAt = 1 s
TM
, di/dt
GS
, I
D
D
DSS
Power MOSFET
DC
D
= 8 mA
= 1 mA
G
, V
300 s, duty cycle
= 0.5 I
= 2
100 A/ s, V
DS
= 0
D25
GS
= 1 M
DD
T
T
(T
J
J
= 25 C
= 125 C
J
rr
V
= 25 C, unless otherwise specified)
JM
DSS
2 % 32N60
32N60
36N60
32N60 128
36N60 144
36N60
Maximum Ratings
Min.
-55 ...
-55 ...
600
IXFK
0.9/6 1.5/13
Characteristic Values
600
600
500
300
2
20
30
32
36
20
30
10
5
-
-
- 1.5/13
Typ. Max.
IXFN
+150
+150
2500
3000
600
600
128
144
520
150
20
30
32
36
20
30
30
IXFK/FN 36N60 600V 36A 0.18
IXFK/FN 32N60 600V 32A 0.25
5
-
IXFK 32N60
IXFK 36N60
0.18
0.25
200
400
4.5
Nm/lb.in.
Nm/lb.in.
2
V/ns
mA
nA
mJ
V~
V~
V
V
W
A
C
C
C
C
V
V
V
V
A
A
A
A
A
g
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
Features
Applications
Advantages
International standard packages
JEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount
Space savings
High power density
miniBLOC, SOT-227 B (IXFN)
can be used as Main or Kelvin Source
V
Either Source terminal at miniBLOC
G = Gate
S = Source
DSS
DS (on)
TO-264 AA (IXFK)
G
IXFN 32N60
IXFN 36N60
D
HDMOS
I
D25
S
E153432
G
Fax: +49-6206-503629
IXYS Semiconductor
R
TM
D = Drain
TAB = Drain
DS(on)
process
S
92807G (01/96)
D (TAB)
D
250ns
250ns
t
S
rr
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IXFN36N60 Summary of contents
Page 1
... 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle ©1996 IXYS Corporation. All rights reserved. XYS reserves the right to change limits, test conditions, and dimensions. I IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXFK 32N60 IXFK 36N60 IXFK/FN 36N60 600V 36A 0.18 IXFK/FN 32N60 600V 32A 0 ...
Page 2
... Pulse test, t 300 s, duty cycle -di/dt = 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. , pulse test 36 D25 9000 840 ...
Page 3
... XYS reserves the right to change limits, test conditions, and dimensions. I IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXFK 32N60 IXFN 32N60 IXFK 36N60 IXFN 36N60 Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 IXYS Semiconductor ...
Page 4
... IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXFK 32N60 IXFK 36N60 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFN 32N60 IXFN 36N60 5,049,961 5,187,117 5,486,715 5,063,307 5,237,481 ...