IXFN180N20 IXYS, IXFN180N20 Datasheet

MOSFET N-CH 200V 180A SOT-227B

IXFN180N20

Manufacturer Part Number
IXFN180N20
Description
MOSFET N-CH 200V 180A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFN180N20

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
180A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
660nC @ 10V
Input Capacitance (ciss) @ Vds
22000pF @ 25V
Power - Max
700W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
180
Rds(on), Max, Tj=25°c, (?)
0.01
Ciss, Typ, (pf)
22000
Qg, Typ, (nc)
660
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
694
Rthjc, Max, (ºc/w)
0.18
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN180N20
Quantity:
292
Part Number:
IXFN180N20
Manufacturer:
ST
0
Symbol
V
V
I
I
R
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Preliminary data
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
IXYS reserves the right to change limits, test conditions, and dimensions.
D25
L(RMS)
DM
AR
GSS
DSS
J
JM
stg
DGR
AR
AS
D
DSS
GH(th)
DSS
GS
GSM
ISOL
DS(on)
d
Terminal current limit
T
T
T
T
T
Test Conditions
T
T
Continuous
Transient
I
T
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
V
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
S
ISOL
C
C
C
C
C
C
J
J
GS
DS
GS
DS
GS
GS
J
= 25°C, Chip capability
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 25°C to 150°C
= 25°C to 150°C; R
£ I
£ 150°C, R
= 25°C
£ 1 mA
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
TM
DM
GS
, di/dt £ 100 A/ms, V
DSS
, I
D
D
DC
D
= 3 mA
= 8 mA
, V
= 0.5 • I
G
= 2 W
DS
t = 1 min
t = 1 s
= 0
D25
GS
= 1 MW
DD
T
T
J
J
£ V
(T
= 25°C
= 125°C
J
rr
DSS
= 25°C, unless otherwise specified)
JM
,
IXFN 180N20
min.
200
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
200
200
±20
±30
180
100
720
700
150
36
64
30
4
5
max.
±200
100
10 mW
4
2 mA
D
V/ns
S
mJ
V~
V~
nA
mA
W
°C
°C
°C
V
V
V
V
A
A
A
A
V
V
J
g
Features
• International standard packages
• miniBLOC, with Aluminium nitride
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
V
I
R
t
miniBLOC, SOT-227 B (IXFN)
D25
rr
isolation
rated
power supplies
DS(on)
DSS
E153432
DS (on)
= 200 V
= 180 A
=
< 250 ns
HDMOS
G
10 mW
D = Drain
S
TM
process
D
98551B (7/00)
S
1 - 2

Related parts for IXFN180N20

IXFN180N20 Summary of contents

Page 1

... DSS DS DSS 0.5 • I DS(on Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFN 180N20 rr Maximum Ratings 200 = 1 MW 200 GS ±20 ±30 180 100 720 JM 36 ...

Page 2

... Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max 100 25°C 250 25°C 1 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFN 180N20 miniBLOC, SOT-227 screws (4x) supplied ns Dim. Millimeter Min ...

Related keywords