POWER MOS 7
®
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
®
and Q
. Power MOS 7
combines lower conduction and switching losses
g
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol
Parameter
V
Drain-Source Voltage
DSS
I
Continuous Drain Current @ T
D
I
1
Pulsed Drain Current
DM
V
Gate-Source Voltage Continuous
GS
V
Gate-Source Voltage Transient
GSM
Total Power Dissipation @ T
P
D
Linear Derating Factor
T
,T
Operating and Storage Junction Temperature Range
J
STG
T
Lead Temperature: 0.063" from Case for 10 Sec.
L
I
1
Avalanche Current
(Repetitive and Non-Repetitive)
AR
E
Repetitive Avalanche Energy
AR
E
Single Pulse Avalanche Energy
AS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
BV
Drain-Source Breakdown Voltage (V
DSS
R
Drain-Source On-State Resistance
DS(on)
Zero Gate Voltage Drain Current (V
I
DSS
Zero Gate Voltage Drain Current (V
I
Gate-Source Leakage Current (V
GSS
Gate Threshold Voltage (V
V
GS(th)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
FREDFET
R
®
by significantly lowering R
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
FAST RECOVERY BODY DIODE
•
All Ratings: T
= 25°C
C
= 25°C
C
1
4
= 0V, I
= 250µA)
GS
D
2
(V
= 10V, I
= 15.5A)
GS
D
= 600V, V
= 0V)
DS
GS
= 480V, V
= 0V, T
= 125°C)
DS
GS
C
= ±30V, V
= 0V)
GS
DS
= V
, I
= 2.5mA)
DS
GS
D
APT Website - http://www.advancedpower.com
600V 31A 0.170
DS(ON)
"UL Recognized"
ISOTOP
®
G
= 25°C unless otherwise specified.
C
APT6017JFLL
UNIT
600
Volts
31
Amps
124
±30
Volts
±40
375
Watts
3.0
W/°C
-55 to 150
300
Amps
31
35
1600
MIN
TYP
MAX
UNIT
600
Volts
0.170
Ohms
250
1000
±100
Volts
3
5
Ω Ω Ω Ω Ω
D
S
°C
mJ
µA
nA