APT5010JFLL Microsemi Power Products Group, APT5010JFLL Datasheet

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APT5010JFLL

Manufacturer Part Number
APT5010JFLL
Description
MOSFET N-CH 500V 41A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT5010JFLL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 20.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
41A
Vgs(th) (max) @ Id
5V @ 2.5mA
Gate Charge (qg) @ Vgs
95nC @ 10V
Input Capacitance (ciss) @ Vds
4360pF @ 25V
Power - Max
378W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT5010JFLL
Manufacturer:
APT
Quantity:
25
Part Number:
APT5010JFLL
Manufacturer:
RENESAS
Quantity:
3 000
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Q
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
Symbol
Symbol
T
R
V
BV
V
V
J
V
I
I
E
E
DS(on)
GS(th)
,T
I
I
DSS
GSS
GSM
P
T
DSS
DM
I
AR
GS
D
AR
AS
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
g
. Power MOS 7
POWER MOS 7
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of low loss, high voltage, N-Channel
®
combines lower conduction and switching losses
1
1
(Repetitive and Non-Repetitive)
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
DS
C
FAST RECOVERY BODY DIODE
APT Website - http://www.advancedpower.com
= V
C
= 25°C
1
= 25°C
4
GS
GS
2
DS
, I
DS
®
= ±30V, V
GS
D
R
by significantly lowering R
(V
= 400V, V
= 500V, V
= 2.5mA)
= 0V, I
GS
FREDFET
= 10V, I
D
DS
= 250µA)
GS
GS
= 0V)
= 0V, T
= 0V)
D
= 20.5A)
All Ratings: T
C
= 125°C)
DS(ON)
C
500V 41A 0.100
= 25°C unless otherwise specified.
MIN
500
3
APT5010JFLL
-55 to 150
ISOTOP
1600
TYP
3.03
±30
±40
500
164
378
300
41
41
35
®
0.100
±100
MAX
1000
250
5
"UL Recognized"
G
Amps
Amps
Ohms
Watts
UNIT
Volts
Volts
W/°C
UNIT
Volts
Volts
mJ
°C
µA
nA
Ω Ω Ω Ω Ω
D
S

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APT5010JFLL Summary of contents

Page 1

... ±30V 0V 2.5mA APT Website - http://www.advancedpower.com 500V 41A 0.100 DS(ON) "UL Recognized" ISOTOP ® 25°C unless otherwise specified. C APT5010JFLL UNIT 500 Volts 41 Amps 164 ±30 Volts ±40 378 Watts 3.03 W/°C -55 to 150 300 Amps 41 35 1600 MIN TYP MAX ...

Page 2

... Starting T = +25° 1.65mH numbers reflect the limitations of the test circuit rather than the dt device itself. 6 Eon includes diode reverse recovery. See figures 18, 20. SINGLE PULSE - RECTANGULAR PULSE DURATION (SECONDS) APT5010JFLL MIN TYP MAX 4360 895 485 = 15V GS 455 = 5Ω ...

Page 3

RC MODEL Junction temp. (°C) 0.0988 Power (watts) 0.230 Case temperature. (°C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 100 V DS > (ON (ON)MAX. 90 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 80 70 ...

Page 4

OPERATION HERE 100 LIMITED (ON =+25° =+150°C SINGLE PULSE 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 41A D 12 ...

Page 5

... Source 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) APT5010JFLL Gate Voltage t d(off) Drain Voltage 90 10% Drain Current Switching Energy Hex Nut M4 (4 places) 25.2 (0.992) 25 ...

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