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APT39M60J
APT39M60J | |
|---|---|
| Manufacturer Part Number | APT39M60J |
| Description | MOSFET N-CH 600V 39A SOT-227 |
| Manufacturer | Microsemi Power Products Group |
| Series | POWER MOS 8™ |
| APT39M60J datasheets |
|
Availability: By request
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
×
Shipping terms
- Standard delivery time differs from 5-8 business days if the supplier is a local one to 12-14 days if the suplier is from overseas. If delivery time differs it's always mentioned in our quotation.
- We ship worldwide using main international couriers like FedEx, DHL, UPS, TNT, EMS. We can also use client's freight account. Other shipping methods can be discussed. We do best to meet your needs!
Payment terms
- For new client payment term is payment in advance. At this moment we accept 3 payment methods: wire transfer, PayPal and Western Union. Credit card payment is under constrution and will be introduced soon. Escrow service is acceptable. Net terms for regular customers is not a problem. Working with us is totally safe for you.
- If you still have any questions - please contact us
Specifications of APT39M60J | |||
|---|---|---|---|
| Fet Type | MOSFET N-Channel, Metal Oxide | Fet Feature | Standard |
| Rds On (max) @ Id, Vgs | 130 mOhm @ 28A, 10V | Drain To Source Voltage (vdss) | 600V |
| Current - Continuous Drain (id) @ 25° C | 39A | Vgs(th) (max) @ Id | 5V @ 2.5mA |
| Gate Charge (qg) @ Vgs | 280nC @ 10V | Input Capacitance (ciss) @ Vds | 11300pF @ 25V |
| Power - Max | 480W | Mounting Type | Chassis Mount |
| Package / Case | SOT-227, miniBLOC | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
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N-Channel MOSFET
™
Power MOS 8
is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low C
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
FEATURES
• Fast switching with low EMI/RFI
• Low R
DS(on)
• Ultra low C
for improved noise immunity
rss
• Low gate charge
• Avalanche energy rated
• RoHS compliant
Absolute Maximum Ratings
Symbol
Parameter
Continuous Drain Current @ T
I
D
Continuous Drain Current @ T
I
1
Pulsed Drain Current
DM
V
Gate-Source Voltage
GS
E
Single Pulse Avalanche Energy
AS
I
Avalanche Current, Repetitive or Non-Repetitive
AR
Thermal and Mechanical Characteristics
Symbol
Characteristic
P
Total Power Dissipation @ T
D
R
Junction to Case Thermal Resistance
θ JC
R
Case to Sink Thermal Resistance, Flat, Greased Surface
θ CS
T
,T
Operating and Storage Junction Temperature Range
J
STG
V
RMS Voltage
(50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
Isolation
W
Package Weight
T
Torque
Terminals and Mounting Screws.
"Miller" capaci-
rss
TYPICAL APPLICATIONS
• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters
= 25°C
C
= 100°C
C
2
= 25°C
C
Microsemi Website - http://www.microsemi.com
APT39M60J
600V, 39A, 0.13Ω Max
"UL Recognized"
file # E145592
ISOTOP
®
D
APT39M60J
Single die MOSFET
G
S
Ratings
Unit
39
24
A
210
±30
V
1580
mJ
28
A
Min
Typ
Max
Unit
480
W
0.26
°C/W
0.15
°C
-55
150
V
2500
oz
1.03
g
29.2
in·lbf
10
1.1
N·m
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APT39M60J Summary of contents |
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