APT20M20JLL Microsemi Power Products Group, APT20M20JLL Datasheet
APT20M20JLL
Manufacturer Part Number
APT20M20JLL
Description
MOSFET N-CH 200V 104A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT20M20JLL.pdf
(5 pages)
Specifications of APT20M20JLL
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 52A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
104A
Vgs(th) (max) @ Id
5V @ 2.5mA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
6850pF @ 25V
Power - Max
463W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT20M20JLL
Manufacturer:
APT
Quantity:
15 500
STATIC ELECTRICAL CHARACTERISTICS
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Q
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol
Symbol
T
R
V
BV
V
V
J
I
V
I
E
E
DS(on)
GS(th)
I
,T
GSS
I
DSS
GSM
P
DM
T
DSS
AR
I
GS
AR
D
AS
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
g
. Power MOS 7
POWER MOS 7
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of low loss, high voltage, N-Channel
®
combines lower conduction and switching losses
1
1
(Repetitive and Non-Repetitive)
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
DS
C
APT Website - http://www.advancedpower.com
= V
C
= 25°C
1
= 25°C
4
GS
GS
2
DS
DS
, I
®
= ±30V, V
GS
D
by significantly lowering R
(V
= 200V, V
= 160V, V
R
= 2.5mA)
= 0V, I
GS
MOSFET
= 10V, I
D
DS
= 250µA)
GS
GS
= 0V)
= 0V, T
= 0V)
D
= 52A)
All Ratings: T
C
= 125°C)
DS(ON)
200V 104A 0.020
C
= 25°C unless otherwise specified.
MIN
200
3
APT20M20JLL
-55 to 150
ISOTOP
2500
3.70
TYP
±30
±40
200
104
416
463
300
100
50
®
0.020
±100
MAX
100
500
5
"UL Recognized"
G
Amps
Amps
Ohms
Watts
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
°C
µA
nA
Ω Ω Ω Ω Ω
D
S
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APT20M20JLL Summary of contents
Page 1
... ±30V 0V 2.5mA APT Website - http://www.advancedpower.com 200V 104A 0.020 DS(ON) "UL Recognized" ISOTOP ® 25°C unless otherwise specified. C APT20M20JLL UNIT 200 Volts 104 Amps 416 ±30 Volts ±40 463 Watts 3.70 W/°C -55 to 150 300 Amps 100 50 2500 MIN TYP MAX ...
Page 2
... Starting T = +25° 0.46mH numbers reflect the limitations of the test circuit rather than the dt device itself. 6 Eon includes diode reverse recovery. See figures 18, 20. SINGLE PULSE - RECTANGULAR PULSE DURATION (SECONDS) APT20M20JLL MIN TYP MAX 6850 2180 95 110 465 = 15V GS 455 = 5Ω ...
Page 3
RC MODEL Junction temp. ( ”C) 0.0409 Power 0.225 (Watts) 0.00361 Case temperature FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 200 V DS > (ON DS(ON) MAX. 180 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE ...
Page 4
OPERATION HERE LIMITED (ON) 100 =+25° =+150°C SINGLE PULSE 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 75A D V ...
Page 5
... Source 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) APT20M20JLL 90% Gate Voltage t f Drain Voltage 90% 10% 0 Drain Current 11.8 (.463) 12.2 (.480) 8.9 (.350) 9 ...