APT6013JVR Microsemi Power Products Group, APT6013JVR Datasheet
APT6013JVR
Manufacturer Part Number
APT6013JVR
Description
MOSFET N-CH 600V 40A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS V®r
Datasheet
1.APT6013JVR.pdf
(4 pages)
Specifications of APT6013JVR
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
540nC @ 10V
Input Capacitance (ciss) @ Vds
10560pF @ 25V
Power - Max
500W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT6013JVR
Manufacturer:
ST
Quantity:
30 000
Power MOS V
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• Lower Leakage
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
T
R
BV
V
V
V
J
I
I
I
V
E
E
DS(on)
D(on)
GS(th)
I
,T
I
DSS
GSS
P
GSM
T
DSS
DM
I
AR
GS
AR
AS
D
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of high voltage N-Channel enhancement
POWER MOS V
1
1
(Repetitive and Non-Repetitive)
2
(V
DS
Microsemi Website - http://www.microsemi.com
C
DS
1
= V
C
= 25°C
• 100% Avalanche Tested
• Popular SOT-227 Package
> I
= 25°C
4
GS
GS
D(on)
2
DS
DS
, I
= ±30V, V
GS
D
(V
= V
= 0.8 V
x R
= 0V, I
= 1mA)
GS
DSS
DS(on)
= 10V, 0.5 I
, V
DSS
D
DS
= 250µA)
GS
Max, V
®
= 0V)
, V
= 0V)
GS
D[Cont.]
= 0V, T
GS
All Ratings: T
= 10V)
)
C
= 125°C)
600V 40A 0.130Ω Ω Ω Ω Ω
C
®
= 25°C unless otherwise specified.
APT6013JVR
MIN
600
40
2
APT6013JVR
-55 to 150
ISOTOP
1300
TYP
600
160
±30
±40
500
300
G
40
30
30
4
®
0.130
±100
MAX
500
50
"UL Recognized"
4
D
S
Ohms
Amps
Watts
Amps
Amps
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
µA
nA
°C
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APT6013JVR Summary of contents
Page 1
... GS = ±30V 0V 1mA Microsemi Website - http://www.microsemi.com APT6013JVR 600V 40A 0.130Ω Ω Ω Ω Ω ® "UL Recognized" ISOTOP ® 25°C unless otherwise specified. C APT6013JVR 600 40 160 ±30 ±40 500 4 -55 to 150 300 30 30 1300 MIN TYP MAX 600 40 ) 0.130 50 = 125°C) ...
Page 2
... D[Cont /dt = 100A/µs) S D[Cont /dt = 100A/µs) S D[Cont See MIL-STD-750 Method 3471 4 Starting T = +25° 2.89mH RECTANGULAR PULSE DURATION (SECONDS) APT6013JVR MIN TYP MAX 8800 10560 1050 1470 420 630 360 540 42 65 DSS 160 240 DSS MIN TYP MAX 40 160 1 ...
Page 3
... FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE APT6013JVR =7V, 10V & 15V 5. DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS NORMALIZED 10V @ 0.5 I [Cont =10V V GS =20V 15 30 ...
Page 4
... H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) * Source * Source Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 APT6013JVR C iss C oss C rss . DRAIN-TO-SOURCE VOLTAGE (VOLTS =+150° =+25° ...