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APT60M80JVR
APT60M80JVR | |
|---|---|
| Manufacturer Part Number | APT60M80JVR |
| Description | MOSFET N-CH 600V 55A SOT-227 |
| Manufacturer | Microsemi Power Products Group |
| Series | POWER MOS V® |
| APT60M80JVR datasheets |
|
Availability: By request
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
×
Shipping terms
- Standard delivery time differs from 5-8 business days if the supplier is a local one to 12-14 days if the suplier is from overseas. If delivery time differs it's always mentioned in our quotation.
- We ship worldwide using main international couriers like FedEx, DHL, UPS, TNT, EMS. We can also use client's freight account. Other shipping methods can be discussed. We do best to meet your needs!
Payment terms
- For new client payment term is payment in advance. At this moment we accept 3 payment methods: wire transfer, PayPal and Western Union. Credit card payment is under constrution and will be introduced soon. Escrow service is acceptable. Net terms for regular customers is not a problem. Working with us is totally safe for you.
- If you still have any questions - please contact us
Specifications of APT60M80JVR | |||
|---|---|---|---|
| Fet Type | MOSFET N-Channel, Metal Oxide | Fet Feature | Standard |
| Rds On (max) @ Id, Vgs | 80 mOhm @ 500mA, 10V | Drain To Source Voltage (vdss) | 600V |
| Current - Continuous Drain (id) @ 25° C | 55A | Vgs(th) (max) @ Id | 4V @ 5mA |
| Gate Charge (qg) @ Vgs | 870nC @ 10V | Input Capacitance (ciss) @ Vds | 14500pF @ 25V |
| Power - Max | 568W | Mounting Type | Chassis Mount |
| Package / Case | SOT-227, miniBLOC | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
PrevNext
220
OPERATION HERE
LIMITED BY R DS (ON)
100
10
T C =+25°C
T J =+150°C
SINGLE PULSE
1
1
10
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
= I
[Cont.]
D
D
V DS =100V
12
V DS =250V
8
4
0
0
10
20
30
40
50
60
Q
, TOTAL GATE CHARGE (nC)
g
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
r = 4.0 (.157)
(2 places)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
70,000
100µS
10,000
5000
1mS
1000
10mS
500
100
100
600
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
V DS =400V
10
70
80
90
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
®
SOT-227 (ISOTOP
) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
8.9 (.350)
31.7 (1.248)
9.6 (.378)
W=4.1 (.161)
7.8 (.307)
W=4.3 (.169)
8.2 (.322)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
1.95 (.077)
3.6 (.143)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
* Source
Dimensions in Millimeters and (Inches)
5,045,903
5,089,434
5,256,583
4,748,103
5,283,202
APT60M80JVR
C iss
C oss
C rss
0
10
20
30
40
50
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
T J =+150°C
T J =+25°C
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
0.75 (.030)
12.6 (.496)
0.85 (.033)
12.8 (.504)
Drain
*
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Gate
5,182,234
5,019,522
5,262,336
5,231,474
5,434,095
5,528,058
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