APT60M75JLL

Manufacturer Part NumberAPT60M75JLL
DescriptionMOSFET N-CH 600V 58A SOT-227
ManufacturerMicrosemi Power Products Group
SeriesPOWER MOS 7®
APT60M75JLL datasheets

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Specifications of APT60M75JLL

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs75 mOhm @ 29A, 10VDrain To Source Voltage (vdss)600V
Current - Continuous Drain (id) @ 25° C58AVgs(th) (max) @ Id5V @ 5mA
Gate Charge (qg) @ Vgs195nC @ 10VInput Capacitance (ciss) @ Vds8930pF @ 25V
Power - Max595WMounting TypeChassis Mount
Package / CaseSOT-227, miniBLOCLead Free Status / RoHS StatusLead free / RoHS Compliant
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POWER MOS 7
®
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
®
and Q
. Power MOS 7
combines lower conduction and switching losses
g
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol
Parameter
V
Drain-Source Voltage
DSS
I
Continuous Drain Current @ T
D
1
I
Pulsed Drain Current
DM
V
Gate-Source Voltage Continuous
GS
V
Gate-Source Voltage Transient
GSM
Total Power Dissipation @ T
P
D
Linear Derating Factor
T
,T
Operating and Storage Junction Temperature Range
J
STG
T
Lead Temperature: 0.063" from Case for 10 Sec.
L
1
I
Avalanche Current
(Repetitive and Non-Repetitive)
AR
E
Repetitive Avalanche Energy
AR
E
Single Pulse Avalanche Energy
AS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
BV
Drain-Source Breakdown Voltage (V
DSS
R
Drain-Source On-State Resistance
DS(on)
Zero Gate Voltage Drain Current (V
I
DSS
Zero Gate Voltage Drain Current (V
I
Gate-Source Leakage Current (V
GSS
V
Gate Threshold Voltage (V
GS(th)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MOSFET
R
®
by significantly lowering R
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
All Ratings: T
= 25°C
C
= 25°C
C
1
4
= 0V, I
= 250µA)
GS
D
2
(V
= 10V, I
= 29A)
GS
D
= 600V, V
= 0V)
DS
GS
= 480V, V
= 0V, T
= 125°C)
DS
GS
C
= ±30V, V
= 0V)
GS
DS
= V
, I
= 5mA)
DS
GS
D
APT Website - http://www.advancedpower.com
600V 58A 0.075
DS(ON)
"UL Recognized"
ISOTOP
®
G
= 25°C unless otherwise specified.
C
APT60M75JLL
UNIT
600
Volts
58
Amps
232
±30
Volts
±40
595
Watts
4.76
W/°C
-55 to 150
300
Amps
58
50
3200
UNIT
MIN
TYP
MAX
600
Volts
0.075
Ohms
100
500
±100
Volts
3
5
Ω Ω Ω Ω Ω
D
S
°C
mJ
µA
nA

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APT60M75JLL Summary of contents

  • Page 1

    ... ±30V 0V 5mA APT Website - http://www.advancedpower.com 600V 58A 0.075 DS(ON) "UL Recognized" ISOTOP ® 25°C unless otherwise specified. C APT60M75JLL UNIT 600 Volts 58 Amps 232 ±30 Volts ±40 595 Watts 4.76 W/°C -55 to 150 300 Amps 58 50 3200 UNIT MIN TYP ...

  • Page 2

    ... Starting T = +25° 1.90mH numbers reflect the limitations of the test circuit rather than the dt device itself. 6 Eon includes diode reverse recovery. See figures 18, 20. SINGLE PULSE - RECTANGULAR PULSE DURATION (SECONDS) APT60M75JLL MIN TYP MAX 8930 1130 50 195 48 100 1205 = 15V GS 1385 = 5Ω ...

  • Page 3

    RC MODEL Junction temp. (°C) 0.0492 Power 0.142 (watts) 0.0189 Case temperature. (°C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 180 V DS > (ON DS(ON) MAX. 160 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 140 ...

  • Page 4

    OPERATION HERE LIMITED (ON) 100 =+25° =+150°C SINGLE PULSE 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 58A D ...

  • Page 5

    ... Source 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) APT60M75JLL 90% Gate Voltage t d(off) Drain Voltage 90 10% 0 Drain Current Switching Energy 11.8 (.463) 12.2 (.480) 8 ...

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