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APT60M75JVFR
APT60M75JVFR | |
|---|---|
| Manufacturer Part Number | APT60M75JVFR |
| Description | MOSFET N-CH 600V 62A SOT-227 |
| Manufacturer | Microsemi Power Products Group |
| Series | POWER MOS V® |
| APT60M75JVFR datasheets |
|
Availability: By request
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
×
Shipping terms
- Standard delivery time differs from 5-8 business days if the supplier is a local one to 12-14 days if the suplier is from overseas. If delivery time differs it's always mentioned in our quotation.
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Payment terms
- For new client payment term is payment in advance. At this moment we accept 3 payment methods: wire transfer, PayPal and Western Union. Credit card payment is under constrution and will be introduced soon. Escrow service is acceptable. Net terms for regular customers is not a problem. Working with us is totally safe for you.
- If you still have any questions - please contact us
Specifications of APT60M75JVFR | |||
|---|---|---|---|
| Fet Type | MOSFET N-Channel, Metal Oxide | Fet Feature | Standard |
| Rds On (max) @ Id, Vgs | 75 mOhm @ 31A, 10V | Drain To Source Voltage (vdss) | 600V |
| Current - Continuous Drain (id) @ 25° C | 62A | Vgs(th) (max) @ Id | 4V @ 5mA |
| Gate Charge (qg) @ Vgs | 1050nC @ 10V | Input Capacitance (ciss) @ Vds | 19800pF @ 25V |
| Power - Max | 700W | Mounting Type | Chassis Mount |
| Package / Case | SOT-227, miniBLOC | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
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POWER MOS V
Power MOS V
is a new generation of high voltage N-Channel enhancement
®
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• Lower Leakage
• Popular SOT-227 Package
MAXIMUM RATINGS
Symbol
Parameter
V
Drain-Source Voltage
DSS
I
Continuous Drain Current @ T
D
I
1
Pulsed Drain Current
DM
V
Gate-Source Voltage Continuous
GS
V
Gate-Source Voltage Transient
GSM
Total Power Dissipation @ T
P
D
Linear Derating Factor
T
,T
Operating and Storage Junction Temperature Range
J
STG
T
Lead Temperature: 0.063" from Case for 10 Sec.
L
I
1
Avalanche Current
(Repetitive and Non-Repetitive)
AR
E
Repetitive Avalanche Energy
AR
E
Single Pulse Avalanche Energy
AS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
BV
Drain-Source Breakdown Voltage (V
DSS
I
On State Drain Current
D(on)
R
Drain-Source On-State Resistance
DS(on)
Zero Gate Voltage Drain Current (V
I
DSS
Zero Gate Voltage Drain Current (V
I
Gate-Source Leakage Current (V
GSS
V
Gate Threshold Voltage (V
GS(th)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
®
FREDFET
• Avalanche Energy Rated
•
FAST RECOVERY BODY DIODE
All Ratings: T
= 25°C
C
= 25°C
C
1
4
= 0V, I
= 250µA)
GS
D
2
(V
> I
x R
Max, V
= 10V)
DS
D(on)
DS(on)
GS
2
(V
= 10V, I
= 31A)
GS
D
= 600V, V
= 0V)
DS
GS
= 480V, V
= 0V, T
DS
GS
C
= ±30V, V
= 0V)
GS
DS
= V
, I
= 5mA)
DS
GS
D
APT Website - http://www.advancedpower.com
62A 0.075Ω Ω Ω Ω Ω
600V
®
ISOTOP
= 25°C unless otherwise specified.
C
APT60M75JVFR
600
62
248
±30
±40
700
5.6
-55 to 150
300
62
50
3600
MIN
TYP
MAX
600
62
0.075
= 125°C)
1000
±100
2
"UL Recognized"
®
D
G
S
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
UNIT
Volts
Amps
Ohms
250
µA
nA
4
Volts
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APT60M75JVFR Summary of contents |
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