APTM120DA30T1G

Manufacturer Part NumberAPTM120DA30T1G
DescriptionMOSFET N-CH 1200V 31A SP1
ManufacturerMicrosemi Power Products Group
APTM120DA30T1G datasheets

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Specifications of APTM120DA30T1G

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs360 mOhm @ 25A, 10VDrain To Source Voltage (vdss)1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C31AVgs(th) (max) @ Id5V @ 2.5mA
Gate Charge (qg) @ Vgs560nC @ 10VInput Capacitance (ciss) @ Vds14560pF @ 25V
Power - Max657WMounting TypeChassis Mount
Package / CaseSP1Lead Free Status / RoHS StatusLead free / RoHS Compliant
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Download datasheet (145Kb)Embed
Next
Boost chopper
MOSFET Power Module
5
6
11
CR1
3
4
Q2
9
10
1
2
12
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
Parameter
V
Drain - Source Breakdown Voltage
DSS
I
Continuous Drain Current
D
I
Pulsed Drain current
DM
V
Gate - Source Voltage
GS
R
Drain - Source ON Resistance
DSon
P
Maximum Power Dissipation
D
I
Avalanche current (repetitive and non repetitive)
AR
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTM120DA30T1G
V
= 1200V
DSS
R
= 300mΩ typ @ Tj = 25°C
DSon
I
= 31A @ Tc = 25°C
D
Application
•
AC and DC motor control
•
Switched Mode Power Supplies
•
Power Factor Correction
NTC
Features
•
Power MOS 8™ MOSFETs
-
Low R
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
•
Very low stray inductance
•
Internal thermistor for temperature monitoring
•
High level of integration
Benefits
•
Outstanding performance at high frequency operation
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Solderable terminals both for power and signal for
easy PCB mounting
•
Low profile
•
RoHS Compliant
T
= 25°C
c
T
= 80°C
c
T
= 25°C
c
www.microsemi.com
DSon
Max ratings
Unit
1200
V
31
A
23
195
±30
V
360
mΩ
657
W
25
A
1 – 5

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APTM120DA30T1G Summary of contents

  • Page 1

    ... Drain - Source ON Resistance DSon P Maximum Power Dissipation D I Avalanche current (repetitive and non repetitive) AR These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM120DA30T1G V = 1200V DSS R = 300mΩ typ @ Tj = 25°C DSon I = 31A @ Tc = 25°C D Application • ...

  • Page 2

    ... V RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight APTM120DA30T1G = 25°C unless otherwise specified j Test Conditions T = 25°C V =1200V 125° ...

  • Page 3

    ... Typical Mosfet Performance Curve Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.2 0.9 0.16 0.7 0.12 0.5 0.08 0.3 0.04 0.1 0.05 0 0.00001 0.0001 APTM120DA30T1G R T: Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ⎜ ⎟ ⎟ T − ⎥ ...

  • Page 4

    ... Gate Charge vs Gate to Source 12 V =240V I =25A =25° =600V =960V 100 200 300 400 500 Gate Charge (nC) APTM120DA30T1G Low Voltage Output Characteristics 50 T =125° Drain to Source Voltage (V) DS Transfert Characteristics 40 V > D(on) DS(on) 250µs pulse test @ < 0.5 duty cycle 30 20 ...

  • Page 5

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM120DA30T1G Single Pulse 0.001 ...

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