APT10025JVR Microsemi Power Products Group, APT10025JVR Datasheet

APT10025JVR
Manufacturer Part Number	APT10025JVR
Description	MOSFET N-CH 1000V 34A SOT-227
Manufacturer	Microsemi Power Products Group
Series	POWER MOS V®
APT10025JVR datasheets	1. APT10025JVR.pdf (4 pages)

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Warranty: 60 days

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Specifications of APT10025JVR
Fet Type	MOSFET N-Channel, Metal Oxide	Fet Feature	Standard
Rds On (max) @ Id, Vgs	250 mOhm @ 500mA, 10V	Drain To Source Voltage (vdss)	1000V (1kV)
Current - Continuous Drain (id) @ 25° C	34A	Vgs(th) (max) @ Id	4V @ 5mA
Gate Charge (qg) @ Vgs	990nC @ 10V	Input Capacitance (ciss) @ Vds	18000pF @ 25V
Power - Max	700W	Mounting Type	Chassis Mount
Package / Case	SOT-227, miniBLOC	Lead Free Status / RoHS Status	Lead free / RoHS Compliant

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POWER MOS V

Power MOS V

is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Faster Switching

• Lower Leakage

MAXIMUM RATINGS

Symbol

Parameter

Drain-Source Voltage

DSS

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

GSM

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current

D(on)

Drain-Source On-State Resistance

DS(on)

Zero Gate Voltage Drain Current (V

DSS

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

GSS

Gate Threshold Voltage (V

GS(th)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord

• 100% Avalanche Tested

• Popular SOT-227 Package

All Ratings: T

= 25 C

= 0V, I

= 250 A)

> I

x R

Max, V

= 10V)

D(on)

DS(on)

= 10V, 0.5 I

)

D[Cont.]

= V

, V

= 0V)

DSS

= 0.8 V

, V

= 0V, T

DSS

= 30V, V

= 0V)

= V

, I

= 5mA)

APT Website - http://www.advancedpower.com

Bend, Oregon 97702-1035

F-33700 Merignac - France

APT10025JVR

1000V 34A 0.250

"UL Recognized"

ISOTOP

= 25 C unless otherwise specified.

APT10025JVR

1000

136

700

5.6

-55 to 150

300

3600

MIN

TYP

MAX

1000

0.250

100

= 125 C)

500

100

Phone: (541) 382-8028

FAX: (541) 388-0364

Phone: (33) 5 57 92 15 15

FAX: (33) 5 56 47 97 61

UNIT

Volts

Amps

Volts

Watts

W/ C

Amps

UNIT

Volts

Amps

Ohms

Volts

Download datasheet (72Kb)

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APT10025JVR Summary of contents
Page 1 ... I = 5mA APT Website - http://www.advancedpower.com Bend, Oregon 97702-1035 F-33700 Merignac - France APT10025JVR 1000V 34A 0.250 ® "UL Recognized" ISOTOP ® unless otherwise specified. C APT10025JVR 1000 34 136 30 40 700 5.6 -55 to 150 300 34 50 3600 MIN TYP MAX 1000 34 0.250 100 ... Page 2 ... Diode 0V D[Cont /dt = 100A D[Cont /dt = 100A D[Cont See MIL-STD-750 Method 3471 4 Starting 6.23mH RECTANGULAR PULSE DURATION (SECONDS) APT10025JVR MIN TYP MAX 15000 18000 1360 1900 710 1065 660 990 51 75 DSS 250 375 DSS 97 145 16 32 MIN TYP MAX 34 136 1.3 ... Page 3 ... APT10025JVR =6V, 7V, 10V & 15V 100 200 300 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 - > (ON (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE - +125 + GATE-TO-SOURCE VOLTAGE (VOLTS) GS FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 100 T , CASE TEMPERATURE ( C) C FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2 ... Page 4 ... H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) * Source * Source Dimensions in Millimeters and (Inches) 5,045,903 5,089,434 5,182,234 5,256,583 4,748,103 5,283,202 5,231,474 APT10025JVR C iss C oss C rss . DRAIN-TO-SOURCE VOLTAGE (VOLTS =+150 =+25 C 0.4 0.6 0.8 1.0 1.2 1.4 ...

APT10025JVR Summary of contents

Page 1
... I = 5mA APT Website - http://www.advancedpower.com Bend, Oregon 97702-1035 F-33700 Merignac - France APT10025JVR 1000V 34A 0.250 ® "UL Recognized" ISOTOP ® unless otherwise specified. C APT10025JVR 1000 34 136 30 40 700 5.6 -55 to 150 300 34 50 3600 MIN TYP MAX 1000 34 0.250 100 ...
Page 2
... Diode 0V D[Cont /dt = 100A D[Cont /dt = 100A D[Cont See MIL-STD-750 Method 3471 4 Starting 6.23mH RECTANGULAR PULSE DURATION (SECONDS) APT10025JVR MIN TYP MAX 15000 18000 1360 1900 710 1065 660 990 51 75 DSS 250 375 DSS 97 145 16 32 MIN TYP MAX 34 136 1.3 ...
Page 3
... APT10025JVR =6V, 7V, 10V & 15V 100 200 300 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 - > (ON (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE - +125 + GATE-TO-SOURCE VOLTAGE (VOLTS) GS FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 100 T , CASE TEMPERATURE ( C) C FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2 ...
Page 4
... H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) * Source * Source Dimensions in Millimeters and (Inches) 5,045,903 5,089,434 5,182,234 5,256,583 4,748,103 5,283,202 5,231,474 APT10025JVR C iss C oss C rss . DRAIN-TO-SOURCE VOLTAGE (VOLTS =+150 =+25 C 0.4 0.6 0.8 1.0 1.2 1.4 ...

APT10025JVR

APT10025JVR

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Specifications of APT10025JVR

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APT10025JVR Summary of contents

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