APT60M60JLL

Manufacturer Part NumberAPT60M60JLL
DescriptionMOSFET N-CH 600V 70A SOT-227
ManufacturerMicrosemi Power Products Group
SeriesPOWER MOS 7®
APT60M60JLL datasheets

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Specifications of APT60M60JLL

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs60 mOhm @ 35A, 10VDrain To Source Voltage (vdss)600V
Current - Continuous Drain (id) @ 25° C70AVgs(th) (max) @ Id5V @ 5mA
Gate Charge (qg) @ Vgs289nC @ 10VInput Capacitance (ciss) @ Vds12630pF @ 25V
Power - Max694WMounting TypeChassis Mount
Package / CaseSOT-227, miniBLOCLead Free Status / RoHS StatusLead free / RoHS Compliant
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POWER MOS 7
®
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
®
and Q
. Power MOS 7
combines lower conduction and switching losses
g
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol
Parameter
V
Drain-Source Voltage
DSS
I
Continuous Drain Current @ T
D
1
I
Pulsed Drain Current
DM
V
Gate-Source Voltage Continuous
GS
V
Gate-Source Voltage Transient
GSM
Total Power Dissipation @ T
P
D
Linear Derating Factor
T
,T
Operating and Storage Junction Temperature Range
J
STG
T
Lead Temperature: 0.063" from Case for 10 Sec.
L
I
1
Avalanche Current
(Repetitive and Non-Repetitive)
AR
E
Repetitive Avalanche Energy
AR
E
Single Pulse Avalanche Energy
AS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
BV
Drain-Source Breakdown Voltage (V
DSS
R
Drain-Source On-State Resistance
DS(on)
Zero Gate Voltage Drain Current (V
I
DSS
Zero Gate Voltage Drain Current (V
I
Gate-Source Leakage Current (V
GSS
Gate Threshold Voltage (V
V
GS(th)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
R
MOSFET
®
by significantly lowering R
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
All Ratings: T
= 25°C
C
= 25°C
C
1
4
= 0V, I
= 250µA)
GS
D
2
(V
= 10V, 35A)
GS
= 600V, V
= 0V)
DS
GS
= 480V, V
= 0V, T
= 125°C)
DS
GS
C
= ±30V, V
= 0V)
GS
DS
= V
, I
= 5mA)
DS
GS
D
APT Website - http://www.advancedpower.com
APT60M60JLL
800V 70A 0.060
DS(ON)
"UL Recognized"
ISOTOP
®
G
= 25°C unless otherwise specified.
C
APT60M60JLL
UNIT
600
Volts
70
Amps
280
±30
Volts
±40
694
Watts
W/°C
5.56
-55 to 150
300
Amps
70
50
3600
MIN
TYP
MAX
UNIT
600
Volts
0.060
Ohms
100
500
±100
Volts
3
5
D
S
°C
mJ
µA
nA

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APT60M60JLL Summary of contents

  • Page 1

    ... ±30V 0V 5mA APT Website - http://www.advancedpower.com APT60M60JLL 800V 70A 0.060 DS(ON) "UL Recognized" ISOTOP ® 25°C unless otherwise specified. C APT60M60JLL UNIT 600 Volts 70 Amps 280 ±30 Volts ±40 694 Watts W/°C 5.56 -55 to 150 300 Amps 70 50 3600 MIN TYP MAX ...

  • Page 2

    ... Starting T = +25° 1.47mH numbers reflect the limitations of the test circuit rather than the dt device itself. 6 Eon includes diode reverse recovery. See figures 18, 20. SINGLE PULSE - RECTANGULAR PULSE DURATION (SECONDS) APT60M60JLL MIN TYP MAX 12630 2202 157 289 74 146 1428 = 15V ...

  • Page 3

    ... V GS =10V V GS =20V 120 160 I , DRAIN CURRENT (AMPERES) D FIGURE 5, R (ON) vs DRAIN CURRENT DS -50 - 100 125 150 T , JUNCTION TEMPERATURE (°C) J 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 - 100 125 150 T , CASE TEMPERATURE (°C) C FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE APT60M60JLL 4V 30 200 ...

  • Page 4

    ... FIGURE 15, RISE AND FALL TIMES vs CURRENT 10000 V = 400V 70A 125°C J 8000 L = 100µH E includes ON diode reverse recovery. 6000 4000 2000 0 120 FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE APT60M60JLL C iss C oss C rss =+25°C 0.7 0.9 1.1 1.3 1 100 120 I ( off E on ...

  • Page 5

    ... Source 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) APT60M60JLL 90% Gate Voltage Drain Voltage 90 10% Drain Current 0 Switching Energy Hex Nut M4 (4 places) 25.2 (0.992) 25 ...

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