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APTM100DDA35T3G
APTM100DDA35T3G | |
|---|---|
| Manufacturer Part Number | APTM100DDA35T3G |
| Description | MOSFET MOD DUAL BOOST CHOP SP3 |
| Manufacturer | Microsemi Power Products Group |
| APTM100DDA35T3G datasheets |
|
Availability: By request
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
×
Shipping terms
- Standard delivery time differs from 5-8 business days if the supplier is a local one to 12-14 days if the suplier is from overseas. If delivery time differs it's always mentioned in our quotation.
- We ship worldwide using main international couriers like FedEx, DHL, UPS, TNT, EMS. We can also use client's freight account. Other shipping methods can be discussed. We do best to meet your needs!
Payment terms
- For new client payment term is payment in advance. At this moment we accept 3 payment methods: wire transfer, PayPal and Western Union. Credit card payment is under constrution and will be introduced soon. Escrow service is acceptable. Net terms for regular customers is not a problem. Working with us is totally safe for you.
- If you still have any questions - please contact us
Specifications of APTM100DDA35T3G | |||
|---|---|---|---|
| Fet Type | 2 N-Channel (Dual) | Fet Feature | Standard |
| Rds On (max) @ Id, Vgs | 420 mOhm @ 11A, 10V | Drain To Source Voltage (vdss) | 1000V (1kV) |
| Current - Continuous Drain (id) @ 25° C | 22A | Vgs(th) (max) @ Id | 5V @ 2.5mA |
| Gate Charge (qg) @ Vgs | 186nC @ 10V | Input Capacitance (ciss) @ Vds | 5200pF @ 25V |
| Power - Max | 390W | Mounting Type | Chassis Mount |
| Package / Case | SP3 | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
1
2
3
4
5
6
PrevNext
Dual Boost chopper
MOSFET Power Module
13
14
CR1
CR2
22
7
23
8
Q1
26
27
29
30
31
32
15
R1
28 27 26
25
23 22
20
19
29
30
31
32
2
3
4
7
8
10
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
V
Drain - Source Breakdown Voltage
DSS
I
Continuous Drain Current
D
I
Pulsed Drain current
DM
V
Gate - Source Voltage
GS
R
Drain - Source ON Resistance
DSon
P
Maximum Power Dissipation
D
I
Avalanche current (repetitive and non repetitive)
AR
E
Repetitive Avalanche Energy
AR
E
Single Pulse Avalanche Energy
AS
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTM100DDA35T3G
V
= 1000V
DSS
R
= 350mΩ typ @ Tj = 25°C
DSon
I
= 22A @ Tc = 25°C
D
Application
•
AC and DC motor control
•
Switched Mode Power Supplies
•
Power Factor Correction
Features
•
Power MOS 7
-
Low R
Q2
-
Low input and Miller capacitance
-
Low gate charge
4
-
Avalanche energy rated
-
Very rugged
•
Kelvin source for easy drive
3
•
Very low stray inductance
-
Symmetrical design
16
•
Internal thermistor for temperature monitoring
•
High level of integration
18
Benefits
16
•
Outstanding performance at high frequency operation
15
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Solderable terminals both for power and signal for
easy PCB mounting
14
•
Low profile
13
•
11 12
Each leg can be easily paralleled to achieve a single
boost of twice the current capability
•
RoHS Compliant
T
= 25°C
c
T
= 80°C
c
T
= 25°C
c
www.microsemi.com
®
MOSFETs
DSon
Max ratings
Unit
1000
V
22
A
17
88
±30
V
420
mΩ
390
W
25
A
50
mJ
3000
1 – 6
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APTM100DDA35T3G Summary of contents |
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