APTM120DSK57T3G

Manufacturer Part NumberAPTM120DSK57T3G
DescriptionMOSFET MOD DUAL BUCK CHOPPER SP3
ManufacturerMicrosemi Power Products Group
APTM120DSK57T3G datasheets

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Specifications of APTM120DSK57T3G

Fet Type2 N-Channel (Dual)Fet FeatureStandard
Rds On (max) @ Id, Vgs684 mOhm @ 8.5A, 10VDrain To Source Voltage (vdss)1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C17AVgs(th) (max) @ Id5V @ 2.5mA
Gate Charge (qg) @ Vgs187nC @ 10VInput Capacitance (ciss) @ Vds5155pF @ 25V
Power - Max390WMounting TypeChassis Mount
Package / CaseSP3Lead Free Status / RoHS StatusLead free / RoHS Compliant
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Download datasheet (292Kb)Embed
Next
Dual Buck chopper
MOSFET Power Module
13
14
Q1
Q2
18
22
7
19
23
8
CR1
CR2
29
30
31
15
R1
28 27 26
25
23 22
20
19
29
30
31
32
2
3
4
7
8
10
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
V
Drain - Source Breakdown Voltage
DSS
I
Continuous Drain Current
D
I
Pulsed Drain current
DM
V
Gate - Source Voltage
GS
R
Drain - Source ON Resistance
DSon
P
Maximum Power Dissipation
D
I
Avalanche current (repetitive and non repetitive)
AR
E
Repetitive Avalanche Energy
AR
E
Single Pulse Avalanche Energy
AS
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTM120DSK57T3G
V
= 1200V
DSS
R
= 570mΩ typ @ Tj = 25°C
DSon
I
= 17A @ Tc = 25°C
D
Application
AC and DC motor control
Switched Mode Power Supplies
Features
11
Power MOS 7
-
Low R
10
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
32
-
Symmetrical design
16
Internal thermistor for temperature monitoring
High level of integration
Benefits
18
Outstanding performance at high frequency operation
16
Direct mounting to heatsink (isolated package)
15
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
14
13
Each leg can be easily paralleled to achieve a single
11 12
buck of twice the current capability
RoHS Compliant
T
= 25°C
c
T
= 80°C
c
T
= 25°C
c
www.microsemi.com
®
MOSFETs
DSon
Max ratings
Unit
1200
V
17
A
13
68
±30
V
684
mΩ
390
W
22
A
50
mJ
3000
1 – 6

APTM120DSK57T3G Summary of contents

  • Page 1

    ... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM120DSK57T3G V = 1200V DSS R = 570mΩ typ @ Tj = 25°C DSon I = 17A @ Tc = 25°C D Application • ...

  • Page 2

    ... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTM120DSK57T3G = 25°C unless otherwise specified j Test Conditions Min V = 0V,V = 1200V T = 25° 0V,V = 1000V T = 125°C GS ...

  • Page 3

    ... Resistance @ 25° 298.15 K 25/  exp B   SP3 Package outline (dimensions in mm See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTM120DSK57T3G Transistor Diode To heatsink R T: Thermistor temperature 25    Thermistor value     −  25 ...

  • Page 4

    ... V , Drain to Source Voltage ( Drain Current DS(on) 1.4 Normalized to V =10V @ 8.5A 1 1.1 1 0.9 0 Drain Current (A) D APTM120DSK57T3G Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds 250µs pulse test @ < 0.5 duty cycle Drain Current vs Case Temperature 20 16 ...

  • Page 5

    ... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 10000 Ciss Coss 1000 Crss 100 Drain to Source Voltage (V) DS APTM120DSK57T3G ON resistance vs Temperature 2.5 V =10V GS I =8.5A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 100 ...

  • Page 6

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM120DSK57T3G 80 t ...