APTM100UM65DAG

Manufacturer Part NumberAPTM100UM65DAG
DescriptionMOSFET N-CH 1000V 145A SP6
ManufacturerMicrosemi Power Products Group
APTM100UM65DAG datasheets

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Specifications of APTM100UM65DAG

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs78 mOhm @ 72.5A, 10VDrain To Source Voltage (vdss)1000V (1kV)
Current - Continuous Drain (id) @ 25° C145AVgs(th) (max) @ Id5V @ 20mA
Gate Charge (qg) @ Vgs1068nC @ 10VInput Capacitance (ciss) @ Vds28500pF @ 25V
Power - Max3250WMounting TypeChassis Mount
Package / CaseSP6Lead Free Status / RoHS StatusLead free / RoHS Compliant
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Thermal and package characteristics
Symbol Characteristic
R
Junction to Case Thermal Resistance
thJC
RMS Isolation Voltage, any terminal to case t =1 min,
V
ISOL
I isol<1mA, 50/60Hz
T
Operating junction temperature range
J
T
Storage Temperature Range
STG
T
Operating Case Temperature
C
Torque
Mounting torque
Wt
Package Weight
SP6 Package outline
(dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
APTM100UM65DAG
Transistor
Series diode
To Heatsink
M6
For teminals
M5
www.microsemi.com
Min
Typ
Max
Unit
0.038
°C/W
0.23
2500
V
-40
150
°C
-40
125
-40
100
3
5
N.m
2
3.5
280
g
3 – 6