APTM100UM65DAG

Manufacturer Part NumberAPTM100UM65DAG
DescriptionMOSFET N-CH 1000V 145A SP6
ManufacturerMicrosemi Power Products Group
APTM100UM65DAG datasheets

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Specifications of APTM100UM65DAG

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs78 mOhm @ 72.5A, 10VDrain To Source Voltage (vdss)1000V (1kV)
Current - Continuous Drain (id) @ 25° C145AVgs(th) (max) @ Id5V @ 20mA
Gate Charge (qg) @ Vgs1068nC @ 10VInput Capacitance (ciss) @ Vds28500pF @ 25V
Power - Max3250WMounting TypeChassis Mount
Package / CaseSP6Lead Free Status / RoHS StatusLead free / RoHS Compliant
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Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.04
0.9
0.035
0.03
0.7
0.025
0.5
0.02
0.015
0.3
0.01
0.1
0.005
0.05
0
0.00001
0.0001
Low Voltage Output Characteristics
360
V
=15, 10V
320
GS
280
240
200
160
120
80
40
0
0
5
10
15
V
, Drain to Source Voltage (V)
DS
R
vs Drain Current
DS(on)
1.4
Normalized to
V
=10V @ 72.5A
1.3
GS
1.2
1.1
V
=10V
GS
1
V
=20V
GS
0.9
0.8
0
80
160
I
, Drain Current (A)
D
APTM100UM65DAG
Single Pulse
0.001
0.01
rectangular Pulse Duration (Seconds)
480
V
DS
7V
250µs pulse test @ < 0.5 duty cycle
400
6.5V
320
240
6V
160
5.5V
80
5V
0
20
25
30
0
DC Drain Current vs Case Temperature
160
120
80
40
0
240
320
25
www.microsemi.com
0.1
1
10
Transfert Characteristics
> I
(on)xR
(on)MAX
D
DS
T
=25°C
J
T
=125°C
J
T
=-55°C
J
1
2
3
4
5
6
7
8
V
, Gate to Source Voltage (V)
GS
50
75
100
125
150
T
, Case Temperature (°C)
C
4 – 6

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