APTM100UM65DAG

Manufacturer Part NumberAPTM100UM65DAG
DescriptionMOSFET N-CH 1000V 145A SP6
ManufacturerMicrosemi Power Products Group
APTM100UM65DAG datasheets

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Specifications of APTM100UM65DAG

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs78 mOhm @ 72.5A, 10VDrain To Source Voltage (vdss)1000V (1kV)
Current - Continuous Drain (id) @ 25° C145AVgs(th) (max) @ Id5V @ 20mA
Gate Charge (qg) @ Vgs1068nC @ 10VInput Capacitance (ciss) @ Vds28500pF @ 25V
Power - Max3250WMounting TypeChassis Mount
Package / CaseSP6Lead Free Status / RoHS StatusLead free / RoHS Compliant
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Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
T
, Junction Temperature (°C)
J
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25 50 75 100 125 150
T
, Case Temperature (°C)
C
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
Coss
Crss
1000
100
0
10
20
30
40
V
, Drain to Source Voltage (V)
DS
www.microsemi.com
APTM100UM65DAG
ON resistance vs Temperature
2.5
V
=10V
GS
I
=72.5A
D
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25
T
, Junction Temperature (°C)
J
Maximum Safe Operating Area
1000
limited by R
on
DS
100
10
Single pulse
T
=150°C
J
T
=25°C
C
1
1
10
V
, Drain to Source Voltage (V)
DS
Gate Charge vs Gate to Source Voltage
14
I
=145A
D
12
T
=25°C
J
V
=500V
DS
10
8
6
4
2
0
0
300
600
50
Gate Charge (nC)
50
75 100 125 150
100µs
1ms
10ms
100
1000
V
=200V
DS
V
=800V
DS
900
1200
1500
5 – 6

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