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IXFE50N50
IXFE50N50 | |
|---|---|
| Manufacturer Part Number | IXFE50N50 |
| Description | MOSFET N-CH 500V 50A SOT-227B |
| Manufacturer | IXYS |
| Series | HiPerFET™ |
| IXFE50N50 datasheets |
|
Availability: In stock
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
×
Shipping terms
- Standard delivery time differs from 5-8 business days if the supplier is a local one to 12-14 days if the suplier is from overseas. If delivery time differs it's always mentioned in our quotation.
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Payment terms
- For new client payment term is payment in advance. At this moment we accept 3 payment methods: wire transfer, PayPal and Western Union. Credit card payment is under constrution and will be introduced soon. Escrow service is acceptable. Net terms for regular customers is not a problem. Working with us is totally safe for you.
- If you still have any questions - please contact us
Specifications of IXFE50N50 | |||
|---|---|---|---|
| Fet Type | MOSFET N-Channel, Metal Oxide | Fet Feature | Standard |
| Rds On (max) @ Id, Vgs | 100 mOhm @ 25A, 10V | Drain To Source Voltage (vdss) | 500V |
| Current - Continuous Drain (id) @ 25° C | 50A | Vgs(th) (max) @ Id | 4.5V @ 8mA |
| Gate Charge (qg) @ Vgs | 330nC @ 10V | Input Capacitance (ciss) @ Vds | 9400pF @ 25V |
| Power - Max | 500W | Mounting Type | Chassis Mount |
| Package / Case | SOT-227, miniBLOC | Configuration | Single Dual Source |
| Transistor Polarity | N-Channel | Resistance Drain-source Rds (on) | 0.1 Ohms |
| Drain-source Breakdown Voltage | 500 V | Gate-source Breakdown Voltage | +/- 20 V |
| Continuous Drain Current | 50 A | Power Dissipation | 500 W |
| Maximum Operating Temperature | + 150 C | Mounting Style | SMD/SMT |
| Minimum Operating Temperature | - 40 C | Vdss, Max, (v) | 500 |
| Id(cont), Tc=25°c, (a) | 47 | Rds(on), Max, Tj=25°c, (?) | 0.1 |
| Ciss, Typ, (pf) | 9400 | Qg, Typ, (nc) | 330 |
| Trr, Typ, (ns) | - | Trr, Max, (ns) | 180 |
| Pd, (w) | 500 | Rthjc, Max, (ºc/w) | 0.25 |
| Package Style | ISOPLUS227 | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
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PrevNext
HiPerFET
TM
Power MOSFET
Single Die MOSFET
Preliminary data sheet
Symbol Test Conditions
V
T
= 25°C to 150°C
DSS
J
V
T
= 25°C to 150°C, R
= 1MΩ
DGR
J
GS
V
Continuous
GS
V
Transient
GSM
I
T
= 25°C
D25
C
I
T
= 25°C;
Note 1
DM
C
I
T
= 25°C
AR
C
E
T
= 25°C
AR
C
≤ I
, di/dt ≤ 100 A/µs, V
dv/dt
I
S
DM
≤ 150°C, R
= 2 Ω
T
J
G
P
T
= 25°C
D
C
T
J
T
JM
T
stg
V
50/60 Hz, RMS
t = 1 min
ISOL
I
≤ 1 mA
t = 1 s
ISOL
M
Mounting torque
d
Terminal connection torque
Weight
Symbol
Test Conditions
(T
= 25°C, unless otherwise specified)
J
V
V
= 0 V, I
= 1mA
DSS
GS
D
V
V
= V
, I
= 8mA
GS(th)
DS
GS
D
I
V
= ±20V, V
= 0V
GSS
GS
GS
I
V
= V
DSS
DS
DSS
V
= 0 V
GS
R
V
= 10V, I
= I
DS(on)
GS
D
T
Note 2
© 2003 IXYS All rights reserved
IXFE 55N50
IXFE 50N50
Maximum Ratings
500
500
±20
±30
55N50
50N50
55N50
200
50N50
220
≤ V
DD
DSS
500
-40 ... +150
150
-40 ... +150
2500
3000
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
19
Characteristic Values
Min.
Typ.
Max.
500
2.5
T
= 25°C
J
T
= 125°C
J
55N50
50N50
V
I
DSS
D25
500 V
50 A
500 V
47 A
≤ ≤ ≤ ≤ ≤ 250 ns
t
rr
ISOPLUS 227
(IXFE)
TM
G
V
V
V
V
47
A
50
A
A
G = Gate
A
S = Source
55
A
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
60
mJ
Features
5
V/ns
•
Low cost direct-copper bonded
aluminium package
W
•
Encapsulating epoxy meets
°C
UL 94 V-0, flammability classification
°C
•
2500V isolation
°C
•
Low drain to case capacitance
•
Low R
HDMOS
V~
DS (on)
•
Rugged polysilicon gate cell structure
V~
•
Unclamped Inductive Switching (UIS)
rated
•
Low package inductance
g
•
Fast intrinsic Rectifier
•
Conforms to SOT-227B outline
Applications
•
DC-DC converters
•
Battery chargers
•
Switched-mode and resonant-mode
V
power supplies
•
4.5
V
DC choppers
•
Temperature and lighting controls
±200
nA
µA
25
Advantages
2 mA
•
Easy to mount
•
90 m Ω
Space savings
100 m Ω
•
High power density
R
DS(on)
90 mΩ Ω Ω Ω Ω
100 mΩ Ω Ω Ω Ω
S
S
D
D = Drain
process
TM
DS98904(04/03)
Related parts for IXFE50N50 | |||
|---|---|---|---|
| Part Number | Description | Manufacturer | Datasheet |
 IXFE55N50 |
MOSFET N-CH 500V 47A SOT-227B | IXYS |
|
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|
 IXFN180N25T |
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|
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|
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|
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|
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|
 IXFN230N20T |
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|
 IXFN280N085 |
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|
 IXFN200N07 |
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|
 IXFN340N07 |
MOSFET N-CH 70V 340A SOT-227B | IXYS |
|
 IXFN360N15T2 |
MOSFET N-CH 150V 310A SOT227 | IXYS |
|
|
IXFN24N100 |
MOSFET N-CH 1KV 24A SOT-227B | IXYS |
|
 IXFN180N15P |
MOSFET N-CH 150V 150A SOT-227B | IXYS |
|
|
IXFN200N10P |
MOSFET N-CH 100V 200A SOT-227B | IXYS |
|
IXFE50N50 Summary of contents |
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