IXTN17N120L

Manufacturer Part NumberIXTN17N120L
DescriptionMOSFET N-CH 1200V 15A SOT-227B
ManufacturerIXYS
IXTN17N120L datasheets

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Specifications of IXTN17N120L

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs900 mOhm @ 8.5A, 20VDrain To Source Voltage (vdss)1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C15AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs155nC @ 15VInput Capacitance (ciss) @ Vds8300pF @ 25V
Power - Max540WMounting TypeChassis Mount
Package / CaseSOT-227, miniBLOCConfigurationSingle Dual Source
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.99 Ohms
Drain-source Breakdown Voltage1200 VGate-source Breakdown Voltage+/- 30 V
Continuous Drain Current17 APower Dissipation540 W
Maximum Operating Temperature+ 150 CMounting StyleSMD/SMT
Minimum Operating Temperature- 55 CVdss, Max, (v)1200
Id(cont), Tc=25°c, (a)15Rds(on), Max, Tj=25°c, (?)0.9
Ciss, Typ, (pf)8300Qg, Typ, (nc)155
Trr, Typ, (ns)1830Pd, (w)540
Rthjc, Max, (k/w)0.23Package StyleSOT-227B
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Linear
TM
Power MOSFET
w/ Extended FBSOA
N-Channel Enhancement Mode
Avalanche Rated
Guaranteed FBSOA
Symbol
Test Conditions
V
T
= 25°C to 150°C
DSS
J
V
T
= 25°C to 150°C, R
DGR
J
V
Continuous
GSS
V
Transient
GSM
I
T
= 25°C
D25
C
I
T
= 25°C, Pulse Width Limited by T
DM
C
I
T
= 25°C
A
C
E
T
= 25°C
AS
C
P
T
= 25°C
D
C
T
J
T
JM
T
stg
V
50/60 Hz, RMS, t = 1minute
ISOL
≤ 1mA,
I
t = 1s
ISOL
M
Mounting Torque for Base Plate
d
Terminal Connection Torque
Weight
Symbol
Test Conditions
(T
= 25°C, Unless Otherwise Specified)
J
BV
V
= 0V, I
= 1mA
DSS
GS
D
V
V
= V
, I
= 250μA
GS(th)
DS
GS
D
= ±30V, V
I
V
= 0V
GSS
GS
DS
I
V
= V
, V
= 0V
DSS
DS
DSS
GS
R
V
= 20V, I
= 8.5A, Note 1
DS(on)
GS
D
© 2010 IXYS CORPORATION, All Rights Reserved
IXTN17N120L
Maximum Ratings
1200
= 1MΩ
1200
GS
±30
±40
15
34
JM
8.5
2.5
540
-55 to +150
150
-55 to +150
2500
3000
1.5/13
1.3/11.5
30
Characteristic Values
Min.
Typ.
1200
3.0
T
= 125°C
J
V
= 1200V
DSS
I
= 15A
D25
< 900mΩ Ω Ω Ω Ω
D
R
DS(on)
G
S
S
miniBLOC
E153432
G
V
V
V
V
A
G = Gate
D = Drain
S = Source
A
Either Source Terminal S can be used as
A
the Source Terminal or the Kelvin Source
J
(Gate Return) Terminal.
W
°C
Features
°C
Designed for Linear Operations
°C
International Standard Package
V~
Molding Epoxies Meet UL94 V-0
Flammability Classification
V~
Guaranteed FBSOA at 60ºC
Nm/lb.in.
miniBLOC with Aluminum Nitride
Nm/lb.in.
Isolation
g
Low R
HDMOS
DS(on)
Rugged Polysilicon Gate Cell
Structure
Low Package Inductance
Max.
Advantages
V
Easy to Mount
6.0
V
Space Savings
±200 nA
High Power Density
50 μA
2 mA
Applications
900 mΩ
Programmable Loads
Current Regulators
DC-DC Convertors
Battery Chargers
DC Choppers
Temperature and Lighting Controls
S
S
D
Process
TM
DS99814C(05/10)

IXTN17N120L Summary of contents

  • Page 1

    ... ±30V GSS DSS DS DSS 20V 8.5A, Note 1 DS(on © 2010 IXYS CORPORATION, All Rights Reserved IXTN17N120L Maximum Ratings 1200 = 1MΩ 1200 GS ±30 ± 8.5 2.5 540 -55 to +150 150 -55 to +150 2500 3000 1.5/13 1.3/11.5 30 Characteristic Values Min. Typ. 1200 3 125° ...

  • Page 2

    ... Characteristic Values Min. Typ. = 60° 184 C P Characteristic Values Min. Typ 100V 1830 R 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTN17N120L SOT-227B (IXTN) Outline Max. 6 (M4 screws (4x) supplied 0.23 °C/W °C/W Max. W Max 1 6,404,065 B1 6,683,344 ...

  • Page 3

    ... GS 14V 12V 10V 125º 20V GS 14V 12V 10V 8.5A Value vs 125º 25º IXTN17N120L Fig. 2. Extended Output Characteristics @ Volts DS Fig Normalized to I DS(on) Junction Temperature 3 20V GS 2.8 2 2.0 1.6 1.2 0.8 0.4 -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. ...

  • Page 4

    ... V DS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions 125ºC J 25ºC - 40º Volts T = 25ºC J 0.8 0.9 1.0 - Volts C iss C oss C rss 0.001 Volts IXTN17N120L Fig. 8. Transconductance 40ºC, 25ºC, 125º Amperes D Fig. 10. Gate Charge 600V 8.5A ...

  • Page 5

    ... V - Volts DS © 2010 IXYS CORPORATION, All Rights Reserved 100 25µs 10 100µs 1ms 1 10ms 100ms DC 0.1 10 1000 10000 IXTN17N120L Fig. 14. Forward-Bias Safe Operating Area @ T = 60º DS(on) Limit T = 150º 60º Single Pulse 100 1000 V - Volts DS 25µs 100µs ...