MOSFET N-CH 600V 70A ISOTOP

STE70NM60

Manufacturer Part NumberSTE70NM60
DescriptionMOSFET N-CH 600V 70A ISOTOP
ManufacturerSTMicroelectronics
SeriesMDmesh™
STE70NM60 datasheet
 


Specifications of STE70NM60

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs55 mOhm @ 30A, 10VDrain To Source Voltage (vdss)600V
Current - Continuous Drain (id) @ 25° C70AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs266nC @ 10VInput Capacitance (ciss) @ Vds7300pF @ 25V
Power - Max600WMounting TypeChassis Mount
Package / CaseISOTOPTransistor PolarityN Channel
Continuous Drain Current Id30ADrain Source Voltage Vds600V
On Resistance Rds(on)50mohmRds(on) Test Voltage Vgs10V
Threshold Voltage Vgs Typ4VRohs CompliantYes
ConfigurationSingle Dual SourceResistance Drain-source Rds (on)0.055 Ohms
Forward Transconductance Gfs (max / Min)35 SDrain-source Breakdown Voltage600 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current70 A
Power Dissipation600 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 65 C
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names497-3173-5
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TYPE
V
DSS
STE70NM60
600V
< 0.055
TYPICAL R
(on) = 0.050
DS
HIGH dv/dt AND AVALANCHE CAPABILITIES
IMPROVED ESD CAPABILITY
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL
INDUSTRY’S LOWEST ON-RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ORDERING INFORMATION
SALES TYPE
STE70NM60
March 2003
N-CHANNEL 600V - 0.050 - 70A ISOTOP
Zener-Protected MDmesh™Power MOSFET
R
I
DS(on)
D
70 A
MARKING
PACKAGE
E70NM60
ISOTOP
STE70NM60
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
PACKAGING
TUBE
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STE70NM60 Summary of contents

  • Page 1

    ... ORDERING INFORMATION SALES TYPE STE70NM60 March 2003 N-CHANNEL 600V - 0.050 - 70A ISOTOP Zener-Protected MDmesh™Power MOSFET R I DS(on MARKING PACKAGE E70NM60 ISOTOP STE70NM60 ISOTOP INTERNAL SCHEMATIC DIAGRAM PACKAGING TUBE 1/8 ...

  • Page 2

    ... STE70NM60 ABSOLUTE MAXIMUM RATINGS Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous Drain Current (pulsed Total Dissipation at T TOT V Gate source ESD(HBM-C=100pF, R=15K ESD(G-S) Derating Factor dv/dt (1) Peak Diode Recovery voltage slope T Storage Temperature ...

  • Page 3

    ... V GS Test Conditions V = 400 4 (see test circuit, Figure 5) Test Conditions di/dt = 100 A/µ 150° (see test circuit, Figure 5) STE70NM60 Min. Typ. Max. 600 10 = 125°C 100 ± 0.050 0.055 Min. Typ. Max 7300 GS 2000 40 1.8 Min. Typ. Max 178 266 44.5 95 Min ...

  • Page 4

    ... STE70NM60 Safe Operating Area Output Characteristics Transconductance 4/8 Thermal Impedance Transfer Characteristics Static Drain-source On Resistance ...

  • Page 5

    ... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temp. Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs Temperature Normalized BVDSS vs Temperature STE70NM60 5/8 ...

  • Page 6

    ... STE70NM60 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

  • Page 7

    ... STE70NM60 MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 0.169 0.594 1.193 1.503 0.322 7/8 ...

  • Page 8

    ... STE70NM60 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...