STE70NM60 STMicroelectronics, STE70NM60 Datasheet

STE70NM60
Manufacturer Part Number	STE70NM60
Description	MOSFET N-CH 600V 70A ISOTOP
Manufacturer	STMicroelectronics
Series	MDmesh™
STE70NM60 datasheets	1. STE70NM60.pdf (8 pages)

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Specifications of STE70NM60
Fet Type	MOSFET N-Channel, Metal Oxide	Fet Feature	Standard
Rds On (max) @ Id, Vgs	55 mOhm @ 30A, 10V	Drain To Source Voltage (vdss)	600V
Current - Continuous Drain (id) @ 25° C	70A	Vgs(th) (max) @ Id	5V @ 250µA
Gate Charge (qg) @ Vgs	266nC @ 10V	Input Capacitance (ciss) @ Vds	7300pF @ 25V
Power - Max	600W	Mounting Type	Chassis Mount
Package / Case	ISOTOP	Transistor Polarity	N Channel
Continuous Drain Current Id	30A	Drain Source Voltage Vds	600V
On Resistance Rds(on)	50mohm	Rds(on) Test Voltage Vgs	10V
Threshold Voltage Vgs Typ	4V	Rohs Compliant	Yes
Configuration	Single Dual Source	Resistance Drain-source Rds (on)	0.055 Ohms
Forward Transconductance Gfs (max / Min)	35 S	Drain-source Breakdown Voltage	600 V
Gate-source Breakdown Voltage	+/- 30 V	Continuous Drain Current	70 A
Power Dissipation	600 W	Maximum Operating Temperature	+ 150 C
Mounting Style	Through Hole	Minimum Operating Temperature	- 65 C
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Other names	497-3173-5

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TYPE

DSS

STE70NM60

600V

< 0.055

TYPICAL R

(on) = 0.050

HIGH dv/dt AND AVALANCHE CAPABILITIES

IMPROVED ESD CAPABILITY

LOW INPUT CAPACITANCE AND GATE

CHARGE

LOW GATE INPUT RESISTANCE

TIGHT PROCESS CONTROL

INDUSTRY’S LOWEST ON-RESISTANCE

DESCRIPTION

The MDmesh™ is a new revolutionary MOSFET

technology that associates the Multiple Drain pro-

cess with the Company’s PowerMESH™ horizontal

layout. The resulting product has an outstanding low

on-resistance, impressively high dv/dt and excellent

avalanche characteristics. The adoption of the

Company’s proprietary strip technique yields overall

dynamic performance that is significantly better than

that of similar competition’s products.

APPLICATIONS

The MDmesh™ family is very suitable for increasing

power density of high voltage converters allowing

system miniaturization and higher efficiencies.

ORDERING INFORMATION

SALES TYPE

STE70NM60

March 2003

N-CHANNEL 600V - 0.050 - 70A ISOTOP

Zener-Protected MDmesh™Power MOSFET

DS(on)

70 A

MARKING

PACKAGE

E70NM60

ISOTOP

STE70NM60

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

PACKAGING

TUBE

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STE70NM60 Summary of contents
Page 1 ... ORDERING INFORMATION SALES TYPE STE70NM60 March 2003 N-CHANNEL 600V - 0.050 - 70A ISOTOP Zener-Protected MDmesh™Power MOSFET R I DS(on MARKING PACKAGE E70NM60 ISOTOP STE70NM60 ISOTOP INTERNAL SCHEMATIC DIAGRAM PACKAGING TUBE 1/8 ... Page 2 ... STE70NM60 ABSOLUTE MAXIMUM RATINGS Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous Drain Current (pulsed Total Dissipation at T TOT V Gate source ESD(HBM-C=100pF, R=15K ESD(G-S) Derating Factor dv/dt (1) Peak Diode Recovery voltage slope T Storage Temperature ... Page 3 ... V GS Test Conditions V = 400 4 (see test circuit, Figure 5) Test Conditions di/dt = 100 A/µ 150° (see test circuit, Figure 5) STE70NM60 Min. Typ. Max. 600 10 = 125°C 100 ± 0.050 0.055 Min. Typ. Max 7300 GS 2000 40 1.8 Min. Typ. Max 178 266 44.5 95 Min ... Page 4 ... STE70NM60 Safe Operating Area Output Characteristics Transconductance 4/8 Thermal Impedance Transfer Characteristics Static Drain-source On Resistance ... Page 5 ... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temp. Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs Temperature Normalized BVDSS vs Temperature STE70NM60 5/8 ... Page 6 ... STE70NM60 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ... Page 7 ... STE70NM60 MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 0.169 0.594 1.193 1.503 0.322 7/8 ... Page 8 ... STE70NM60 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

STE70NM60 Summary of contents

Page 1
... ORDERING INFORMATION SALES TYPE STE70NM60 March 2003 N-CHANNEL 600V - 0.050 - 70A ISOTOP Zener-Protected MDmesh™Power MOSFET R I DS(on MARKING PACKAGE E70NM60 ISOTOP STE70NM60 ISOTOP INTERNAL SCHEMATIC DIAGRAM PACKAGING TUBE 1/8 ...
Page 2
... STE70NM60 ABSOLUTE MAXIMUM RATINGS Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous Drain Current (pulsed Total Dissipation at T TOT V Gate source ESD(HBM-C=100pF, R=15K ESD(G-S) Derating Factor dv/dt (1) Peak Diode Recovery voltage slope T Storage Temperature ...
Page 3
... V GS Test Conditions V = 400 4 (see test circuit, Figure 5) Test Conditions di/dt = 100 A/µ 150° (see test circuit, Figure 5) STE70NM60 Min. Typ. Max. 600 10 = 125°C 100 ± 0.050 0.055 Min. Typ. Max 7300 GS 2000 40 1.8 Min. Typ. Max 178 266 44.5 95 Min ...
Page 4
... STE70NM60 Safe Operating Area Output Characteristics Transconductance 4/8 Thermal Impedance Transfer Characteristics Static Drain-source On Resistance ...
Page 5
... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temp. Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs Temperature Normalized BVDSS vs Temperature STE70NM60 5/8 ...
Page 6
... STE70NM60 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
Page 7
... STE70NM60 MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 0.169 0.594 1.193 1.503 0.322 7/8 ...
Page 8
... STE70NM60 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

STE70NM60

STE70NM60

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STE70NM60 Summary of contents

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