STE70NM60 STMicroelectronics, STE70NM60 Datasheet - Page 2

MOSFET N-CH 600V 70A ISOTOP

STE70NM60

Manufacturer Part Number
STE70NM60
Description
MOSFET N-CH 600V 70A ISOTOP
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STE70NM60

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
55 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
266nC @ 10V
Input Capacitance (ciss) @ Vds
7300pF @ 25V
Power - Max
600W
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Transistor Polarity
N Channel
Continuous Drain Current Id
30A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Configuration
Single Dual Source
Resistance Drain-source Rds (on)
0.055 Ohms
Forward Transconductance Gfs (max / Min)
35 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
70 A
Power Dissipation
600 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3173-5

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STE70NM60
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
(1) I
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/8
V
Rthj-case
Rthj-amb
Symbol
Symbol
Symbol
dv/dt (1)
SD
BV
ESD(G-S)
I
V
DM
P
V
V
E
T
I
DGR
TOT
I
I
AR
T
T
stg
DS
GS
AS
GSO
D
D
70A, di/dt 400 A/µs, V
j
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Gate source ESD(HBM-C=100pF, R=15K
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Parameter
j
= 25 °C, I
DD
V
(BR)DSS
D
C
Parameter
Parameter
GS
= I
= 25°C
, T
GS
j
= 20 k )
max)
AR
j
= 0)
, V
T
JMAX.
DD
C
C
Igs=± 1mA (Open Drain)
= 25°C
= 100°C
= 35 V)
Test Conditions
Max
Max
Min.
Max Value
30
–65 to 150
Value
300
1.4
0.2
30
30
600
600
±30
280
600
150
4.5
70
44
15
6
Typ.
Max.
°C/W
°C/W
W/°C
Unit
Unit
Unit
V/ns
°C
KV
°C
°C
A
V
W
J
V
V
V
A
A
A

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