STE70NM60 STMicroelectronics, STE70NM60 Datasheet - Page 4

• Manufacturer Part Number: STE70NM60
• Description: MOSFET N-CH 600V 70A ISOTOP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STE70NM60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 55 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 266nC @ 10V
• Input Capacitance (ciss) @ Vds: 7300pF @ 25V
• Power - Max: 600W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 50mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Configuration: Single Dual Source
• Resistance Drain-source Rds (on): 0.055 Ohms
• Forward Transconductance Gfs (max / Min): 35 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 70 A
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3173-5

STE70NM60
Safe Operating Area
Output Characteristics
Transconductance
4/8
Thermal Impedance
Static Drain-source On Resistance
Transfer Characteristics