MOSFET N-CH 600V 70A ISOTOP

 

STE70NM60

Manufacturer Part NumberSTE70NM60
DescriptionMOSFET N-CH 600V 70A ISOTOP
ManufacturerSTMicroelectronics
SeriesMDmesh™
STE70NM60 datasheets

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Specifications of STE70NM60

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs55 mOhm @ 30A, 10VDrain To Source Voltage (vdss)600V
Current - Continuous Drain (id) @ 25° C70AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs266nC @ 10VInput Capacitance (ciss) @ Vds7300pF @ 25V
Power - Max600WMounting TypeChassis Mount
Package / CaseISOTOPTransistor PolarityN Channel
Continuous Drain Current Id30ADrain Source Voltage Vds600V
On Resistance Rds(on)50mohmRds(on) Test Voltage Vgs10V
Threshold Voltage Vgs Typ4VRohs CompliantYes
ConfigurationSingle Dual SourceResistance Drain-source Rds (on)0.055 Ohms
Forward Transconductance Gfs (max / Min)35 SDrain-source Breakdown Voltage600 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current70 A
Power Dissipation600 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 65 C
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names497-3173-5
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STE70NM60
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit