VMO1200-01F IXYS, VMO1200-01F Datasheet - Page 5

• Manufacturer Part Number: VMO1200-01F
• Description: MOSFET N-CH 100V 1245A Y3-LI
• Manufacturer: IXYS
• Series: HiPerFET™r
• Type: Single Switch MOSFETs Moduler

Specifications of VMO1200-01F

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.35 mOhm @ 932A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1245A
• Vgs(th) (max) @ Id: 4V @ 64mA
• Gate Charge (qg) @ Vgs: 2520nC @ 10V
• Mounting Type: Chassis Mount
• Package / Case: Y3-Li
• Mounting Style: Screw
• Product: Power Semiconductor Modules
• Typical Delay Time: 360 ns
• Vdss, Max, (v): 100
• Id25, Tc = 25°c, (a): 1220
• Id80, Tc = 80°c, (a): 970
• Rds(on), Max, Tj = 25°c, (mohms): 1.25
• Tf, Typ, (ns): 1020
• Tr, Typ, (ns): 1620
• Rthjc, Max, (k/w): 0.053
• Package Style: Y3-Li (w/o terminal 1, low inductance)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

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E
E
V
[V]
on
on
GS
[mJ]
[mJ]
, E
, E
rec
rec
16
12
30
25
20
15
10
12
10
8
4
0
5
0
8
6
4
2
0
0
0
0
Fig. 6 Typ. turn-on energy & switching times vs.
Fig. 8 Typ. turn-on energy & switching times vs.
Fig. 10 Typical gate charge characteristic
E
R
V
V
T
rec(off)
E
I
V
V
T
E
V
I
T
D
VJ
G
DS
GS
D
on
VJ
DS
GS
rec(on)
DS
VJ
= 125°C
= 1000 A
= 1.8 Ω
=
= 0/10 V
200
= 125°C
= 25°C
=
= 1000 A
= 0/10 V
= 50 V
drain source current, inductive switching
gate resistor, inductive switching
400
2
50 V
50 V
400
800
4
Q
R
G
I
G
D
600
[nC]
[A]
[Ω]
1200
E
6
on
800
1600
8
1000
t
r
t
t
d(on)
t
d(on)
r
2000
10
1600
1200
800
400
0
3000
2500
2000
1500
1000
500
0
[ns]
[ns]
t
t
[mJ]
[mJ]
[ns]
E
E
t
off
off
rr
100
400
380
360
340
320
300
280
80
60
40
20
90
85
80
75
70
65
60
55
50
0
200
0
0
Fig. 7 Typ. turn-off energy & switching times vs.
Fig. 9 Typ. turn-off energy & switching times vs.
Fig. 11 Typ. reverse recovery time t
E
off
E
R
V
V
T
I
V
V
T
off
VJ
D
DS
GS
G
VJ
DS
GS
V
I
T
= 125°C
= 1000 A
D
= 1.8 Ω
=
= 0/10 V
= 125°C
VJ
200
R
300
=
= 0/10 V
drain source current, inductive switching
gate resistor, inductive switching
2
= 1000 A
of the body diode versus di/dt
= 50 V
= 25°C
50 V
50 V
400
400
di
4
F
R
I
/dt [A/µs]
D
G
[A]
[Ω]
600
500
6
VMO 1200-01F
800
600
8
rr
t
t
d(off)
r
t
t
d(off)
f
1000
700
10
1000
800
600
400
200
0
2000
1800
1600
1400
1200
1000
800
600
400
20100614b
[ns]
[ns]
5 - 6
t
t