FA57SA50LC Vishay, FA57SA50LC Datasheet

FA57SA50LC

Manufacturer Part Number

FA57SA50LC

Description

MOSFET N-CH 500V 57A SOT-227

Manufacturer

Vishay

Series

HEXFET®r

Datasheet

1.FA57SA50LC.pdf (8 pages)

Specifications of FA57SA50LC

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

80 mOhm @ 34A, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

57A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

338nC @ 10V

Input Capacitance (ciss) @ Vds

10000pF @ 25V

Power - Max

625W

Mounting Type

Chassis Mount

Package / Case

SOT-227, miniBLOC

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*FA57SA50LC
VS-FA57SA50LC
VS-FA57SA50LC
VSFA57SA50LC
VSFA57SA50LC

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FA57SA50LC

Manufacturer:

Quantity:

Company:

BOSTOCK HK LIMITED

Part Number:

FA57SA50LC

Manufacturer:

Company:

Meier Automation Equipment Co., Limited

Part Number:

FA57SA50LC

Manufacturer:

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FA57SA50LCP

Manufacturer:

COSEL

Quantity:

334

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Absolute Maximum Ratings

Thermal Resistance

Description

Third Generation HEXFETs from International Rectifier

provide the designer with the best combination of fast

switching, ruggedized device design, low on-resistance

and cost-effectiveness.

The SOT-227 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 500 watts.

resistance of the SOT-227 contribute to its wide acceptance

throughout the industry.

dv/dt

www.irf.com

STG

ISO

@ T

Fully Isolated Package

Easy to Use and Parallel

Dynamic dv/dt Rating

Fully Avalanche Rated

Simple Drive Requirements

Low Gate Charge Device

Low Drain to Case Capacitance

Low Internal Inductance

Low On-Resistance

= 25°C

= 100°C

= 25°C

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Insulation Withstand Voltage (AC-RMS)

Mounting torque, M4 srew

Parameter

The low thermal

@ 10V

Typ.

0.05

–––

FA57SA50LC

HEXFET

-55 to + 150

Max.

62.5

228

625

± 20

725

5.0

3.0

2.5

1.3

S O T -2 2 7

DS(on)

Power MOSFET

Max.

DSS

0.20

–––

= 57A

= 500V

= 0.08

PD - 91650A

Units

°C/W

W/°C

V/ns

N•m

°C

2/1/99

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