STE110NS20FD STMicroelectronics, STE110NS20FD Datasheet - Page 10

• Manufacturer Part Number: STE110NS20FD
• Description: MOSFET N-CH 200V 110A ISOTOP
• Manufacturer: STMicroelectronics
• Series: MESH OVERLAY™r

Specifications of STE110NS20FD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 504nC @ 10V
• Input Capacitance (ciss) @ Vds: 7900pF @ 25V
• Power - Max: 500W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2657-5

Package mechanical data
10/12
DIM.
M
C
D
G
H
N
O
A
B
E
F
K
L
J
N
25.15
MIN.
11.8
1.95
0.75
12.6
31.5
14.9
30.1
37.8
8.9
4.1
7.8
4
4
O
J
G
K
L
M
ISOTOP MECHANICAL DATA
TYP.
mm
MAX.
12.2
2.05
0.85
12.8
25.5
31.7
15.1
30.3
38.2
9.1
4.3
8.2
0.350
0.161
0.307
0.466
0.076
0.029
0.496
0.990
1.240
0.157
0.586
1.185
1.488
0.157
MIN.
B
A
C
TYP.
inch
STE110NS20FD
MAX.
0.480
0.358
0.080
0.033
0.503
1.003
1.248
0.169
0.594
1.193
1.503
0.322