STE110NS20FD STMicroelectronics, STE110NS20FD Datasheet - Page 8

• Manufacturer Part Number: STE110NS20FD
• Description: MOSFET N-CH 200V 110A ISOTOP
• Manufacturer: STMicroelectronics
• Series: MESH OVERLAY™r

Specifications of STE110NS20FD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 504nC @ 10V
• Input Capacitance (ciss) @ Vds: 7900pF @ 25V
• Power - Max: 500W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2657-5

Test circuit
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Figure 12. Switching times test circuit for
Figure 14. Test circuit for inductive load
Figure 16. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 13. Gate charge test circuit
Figure 15. Unclamped inductive load test
Figure 17. Switching time waveform
circuit
STE110NS20FD